arXiv subjects

Quynh Vy Tran

Publications and source records attributed to Quynh Vy Tran.

3 recordsLinked to original sources

arXiv2009

Non-trivial scaling of self-phase modulation and three-photon absorption in III-V photonic crystal waveguides

We investigate the nonlinear response of photonic crystal waveguides with suppressed two-photon absorption. A moderate decrease of the group velocity (~ c/6 to c/15, a factor of 2.5) results in a dramatic (30x) enhancement of three-photon absorption well beyond the expected scaling, proportional to 1/(vg)^3. This non-trivial scaling of the effective nonlinear coefficients results from pulse compression, which further enhances the optical field beyond that of purely slow-group velocity interactions. These observations are enabled in mm-long slow-light photonic crystal waveguides owing to the strong anomalous group-velocity dispersion and positive chirp. Our numerical physical model matches measurements remarkably.

physics.optics↗

arXiv2009

Interplay of plasma-induced and fast thermal nonlinearities in a GaAs-based photonic crystal nanocavity

We investigate the nonlinear response of GaAs-based photonic crystal cavities at time scales which are much faster than the typical thermal relaxation rate in photonic devices. We demonstrate a strong interplay between thermal and carrier induced nonlinear effects. We have introduced a dynamical model entailing two thermal relaxation constants which is in very good agreement with experiments. These results will be very important for Photonic Crystal-based nonlinear devices intended to deal with practical high repetition rate optical signals.

cond-mat.mtrl-sci↗

arXiv2008

GaAs photonic crystal cavity with ultra-high Q: microwatt nonlinearity at 1.55 $μ$m

We have realized and measured a GaAs nanocavity in a slab photonic crystal based on the design by Kuramochi et al. [Appl. Phys.Lett., \textbf{88}, 041112, (2006)]. We measure a quality factor Q=700,000, which proves that ultra-high Q nanocavities are also feasible in GaAs. We show that, due to larger two-photon absorption (TPA) in GaAs, nonlinearities appear at the microwatt-level and will be more functional in gallium arsenide than in silicon nanocavities.

cond-mat.mtrl-sci↗