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arXiv · 0804.2314

Switching of the Mott transition based on the hole-driven MIT theory

Hyun-Tak Kim·Bong-Jun Kim·Yong Wook Lee·Byung-Gyu Chae·Sun Jin Yun
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Abstract

Switching voltage of first-order metal-insulator transition (MIT) in VO_2, an inhomogeneous strongly correlated system, is changed by irradiating an infrared light with wavelength, 1.5 micrometer, and applying the electric field (photo-induced switching). This was predicted in the hole-driven MIT theory in which hole doping of a low concentration below 0.01% into conduction band (Fermi surface) induces the abrupt MIT as correlation effect. The switching is explained by the Mott transition not the Peierls transition.

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Hyun-Tak Kim, Bong-Jun Kim, Yong Wook Lee, Byung-Gyu Chae, Sun Jin Yun. 2008-04-15. Switching of the Mott transition based on the hole-driven MIT theory. https://doi.org/10.1016/j.physb.2007.10.188

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