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Hyun-Tak Kim

Publications and source records attributed to Hyun-Tak Kim.

At least 19 recordsLinked to original sources

Superconductor Pb$_{10-x}$Cu$_x$(PO$_4$)$_6$O showing levitation at room temperature and atmospheric pressure and mechanism

A material called LK-99, a modified-lead apatite crystal structure with the composition Pb$_{10-x}$Cu$_x$(PO$_4$)$_6$O ($0.9<x<1.1$), has been synthesized using the solid-state method. The material exhibits the Ohmic metal characteristic of Pb(6s1) above its superconducting critical temperature, $T_c$, and the levitation phenomenon as Meissner effect of a superconductor at room temperature and atmospheric pressure below $T_c$. A LK-99 sample shows $T_c$ above 126.85$^\circ$C (400 K). We analyze that the possibility of room-temperature superconductivity in this material is attributed to two factors: the first being the volume contraction resulting from an insulator-metal transition achieved by substituting Pb with Cu, and the second being on-site repulsive Coulomb interaction enhanced by the structural deformation in the one-dimensional(D) chain (Cu$^{2+}$-O$_{1/2}$-Cu$^{2+}$ along the c-axis) structure owing to superconducting condensation at $T_c$. The mechanism of the room-temperature $T_c$ is discussed by 1-D BR-BCS theory.

cond-mat.supr-con

Identifying diverging-effective mass in MOSFET and $^3$He systems

Emerging devices such as a neuromorphic device and a qubit can use the Mott transition phenomenon, but in particular, the diverging mechanism of the phenomenon remains to be clarified. The diverging-effective mass near Mott insulators was measured in strongly correlated Mott systems such as a fermion $^3$He and a Si metal-oxide-semiconductor-field-effect transistor, and is closely fitted by the effective mass obtained by the extension of the Brinkman-Rice(BR) picture, $m^*/m=1/[1-(U/U_c)^2]=1/(1-κ^2_{BR}ρ^4)$ when $κ^2_{BR}{\approx}1({\neq}$1), where $0<U/U_c=κ_{BR}ρ^2<1$, correlation strength is $κ_{BR}$, band-filling is $ρ$. Its identification is a percolation of a constant mass in the Brinkman-Rice picture. Over $κ_{BR}{\approx}0.96$ is evaluated.

cond-mat.str-el

Mott switching and structural transition in the metal phase of $VO_2$ nanodomain

$VO_2$ undergoes the insulator-metal transition (IMT) and monoclinic-rutile structural phase transition (SPT) near $67^oC$. The IMT switching has many applications. However, there is an unresolved issue whether the IMT is a Mott transition or a Peierls transition. This complication is caused by metal and insulator coexistence, which is an inherent property of the IMT region. Thus, the acquired data in the IMT region are averaged over the two phases in many experiments. We overcome the issue by probing the electronic state of the monoclinic structure and by introducing a model that accounts for the coexisting phases. We reveal the Mott IMT in the non-distorted monoclinic nanodomain between $55-63^oC$, and the distortion-assisted SPT above $60^oC$.

cond-mat.str-el

Fallacies on pairing symmetry and intrinsic electronic Raman spectrum in high-Tc cuprate superconductors

Certain significant fallacies are involved in discussions of the high-Tc mechanism unsolved for over 30 years in cuprate superconductors. These fallacies are explored with the aim of unravelling this mechanism. Moreover, using polarised electronic Raman scattering in inhomogeneous underdoped cuprate superconductors, the intrinsic nonlinear Raman spectrum is obtained by subtracting the pseudogap characteristic of a nonlinear from the linear Raman spectrum measured in the B2g mode of the node area below the critical temperature. The intrinsic nonlinear behaviour implies the existence of the nodal superconducting gap denying dx2-y2-wave pairing symmetry. An origin of the nodal superconducting gap is discussed.

cond-mat.supr-con

High-$T_c$ mechanism through analysis of diverging effective mass for YaBa$_2$Cu$_3$O$_{6+x}$ and pairing symmetry in cuprate superconductors

In order to clarify the high-$T_c$ mechanism in inhomogeneous cuprate layer superconductors, we deduce and find the correlation strength not revealed before, contributing to the formation of the Cooper pair and the 2-D density of state, and demonstrate the pairing symmetry in the superconductors still controversial. To the open questions, the fitting and analysis of the diverging effective mass with decreasing doping, extracted from the acquired quantum-oscillation data in underdoped YBCOO$_{6+x}$ superconductors, can provide solutions. Here, the results of the fitting using the extended Brinkman-Rice(BR) picture reveal the nodal constant Fermi energy with the maximum carrier density, a constant Coulomb correlation strength $k_{BR}$=$U/U_c$>0.90, and a growing Fermi arc from the nodal Fermi point to the isotropic Fermi surface with an increasing $x$. The growing of the Fermi arc indicates that a superconducting gap develops with $x$ from the node to the anti-node. The large $k_{BR}$ results from the $d$-wave MIT for the pseudogap phase in lightly doped superconductors, which can be direct evidence for high-$T_c$ superconductivity. The quantum critical point is regarded as the nodal Fermi point satisfied with the BR picture. The experimentally-measured mass diverging behavior is an average effect and the true effective mass is constant. As an application of the nodal constant carrier density, to find a superconducting node gap, the ARPES data and tunneling data are analyzed. The superconducting node gap is a precursor of $s$-wave symmetry in underdoped cuprates. The half-flux quantum, induced by the circulation of $d$-wave supercurrent and observed by the phase sensitive Josephson-pi junction experiments, is not shown due to anisotropic or asymmetric effect appearing in superconductors with trapped flux. The absence of $d$-wave superconducting pairing symmetry is also revealed.

cond-mat.supr-con

Artifact Free Transient Near-Field Nanoscopy

We report on the first implementation of ultrafast near field nanoscopy carried out with the transient pseudoheterodyne detection method (Tr-pHD). This method is well suited for efficient and artifact free pump-probe scattering-type near-field optical microscopy with nanometer scale resolution. The Tr-pHD technique is critically compared to other data acquisition methods and found to offer significant advantages. Experimental evidence for the advantages of Tr-pHD is provided in the Near-IR frequency range. Crucial factors involved in achieving proper performance of the Tr-pHD method with pulsed laser sources are analyzed and detailed in this work. We applied this novel method to time-resolved and spatially resolved studies of the photo-induced effects in the insulator-to-metal transition system vanadium dioxide with nanometer scale resolution.

cond-mat.mes-hall

Ultrafast Electron-Lattice Coupling Dynamics in VO2 and V2O3 Thin Films

Ultrafast optical pump - optical probe and optical pump - terahertz probe spectroscopy were performed on vanadium dioxide (VO2) and vanadium sesquioxide (V2O3) thin films over a wide temperature range. A comparison of the experimental data from these two different techniques and two different vanadium oxides, in particular a comparison of the electronic oscillations generated by the photoinduced longitudinal acoustic modulation, reveals the strong electron-phonon coupling that exists in the metallic state of both materials. The low energy Drude response of V2O3 appears more susceptible than VO2 to ultrafast strain control. Additionally, our results provide a measurement of the temperature dependence of the sound velocity in both systems, revealing a four- to fivefold increase in VO2 and a three- to fivefold increase in V2O3 across the phase transition. Our data also confirm observations of strong damping and phonon anharmonicity in the metallic phase of VO2, and suggest that a similar phenomenon might be at play in the metallic phase of V2O3. More generally, our simple table-top approach provides relevant and detailed information about dynamical lattice properties of vanadium oxides, opening the way to similar studies in other complex materials.

cond-mat.str-el

Highly repeatable nanoscale phase coexistence in vanadium dioxide films

The metal-insulator transition (MIT) in vanadium dioxide (VO2) has the potential to lead to a number of disruptive technologies, including ultra-fast data storage, optical switches, and transistors which move beyond the limitations of silicon. For applications, VO2 films are deposited on crystalline substrates to prevent cracking observed in bulk VO2 crystals across the thermally driven MIT. Near the MIT, VO2 films exhibit nanoscale coexistence between metallic and insulating phases, which opens up further potential applications such as memristors, tunable capacitors, and optically engineered devices such as perfect absorbers. It is generally believed that the formation of phase domains must be affected to some extent by random processes which lead to unreliable performance in nanoscale MIT based devices. Here we show that nanoscale randomness is suppressed in the thermally driven MIT in sputtered VO2 films; the observed domain patterns of metallic and insulating phases in the vicinity of the MIT in these films behave in a strikingly reproducible way. This result opens the door for realizing reliable nanoscale VO2 devices.

cond-mat.str-el

Direct observation of the M2 phase with its Mott transition in a VO$_2$ film

In VO$_2$, the explicit origin of the insulator-to-metal transition is still disputable between Peierls and Mott insulators. Along with the controversy, its second monoclinic (M2) phase has received considerable attention due to the presence of electron correlation in undimerized vanadium ions. However, the origin of the M2 phase is still obscure. Here, we study a granular VO$_2$ film using conductive atomic force microscopy and Raman scattering. Upon the structural transition from monoclinic to rutile, we observe directly an intermediate state showing the coexistence of monoclinic M1 and M2 phases. The conductivity near the grain boundary in this regime is six times larger than that of the grain core, producing a donut-like landscape. Our results reveal an intra-grain percolation process, indicating that VO$_2$ with the M2 phase is a Mott insulator.

cond-mat.str-el

Phase transition in bulk single crystals and thin films of VO2 by nano-infrared spectroscopy and imaging

We have systematically studied a variety of vanadium dioxide (VO2) crystalline forms, including bulk single crystals and oriented thin films, using infrared (IR) near-field spectroscopic imaging techniques. By measuring the IR spectroscopic responses of electrons and phonons in VO2 with sub-grain-size spatial resolution (~20 nm), we show that epitaxial strain in VO2 thin films not only triggers spontaneous local phase separations but also leads to intermediate electronic and lattice states that are intrinsically different from those found in bulk. Generalized rules of strain and symmetry dependent mesoscopic phase inhomogeneity are also discussed. These results set the stage for a comprehensive understanding of complex energy landscapes that may not be readily determined by macroscopic approaches.

cond-mat.str-el

Terahertz nano antenna enabled early transition in VO2

We study terahertz transmission through nano-patterned vanadium dioxide thin film. It is found that the patterning allows the lowering of the apparent transition temperature. For the case of the smallest width nano antennas, the transition temperature is lower by as many as ten degrees relative to the bare film, so that the nano patterned hysteresis curves completely separate themselves from their bare film counterparts. This early transition comes from the one order of magnitude enhanced effective dielectric constants by nano antennas. This phenomenon opens up the possibility of transition temperature engineering.

physics.optics

Nanoscale imaging of the electronic and structural transitions in vanadium dioxide

We investigate the electronic and structural changes at the nanoscale in vanadium dioxide (VO2) in the vicinity of its thermally driven phase transition. Both electronic and structural changes exhibit phase coexistence leading to percolation. In addition, we observe a dichotomy between the local electronic and structural transitions. Nanoscale x-ray diffraction reveals local, non-monotonic switching of the lattice structure, a phenomenon that is not seen in the electronic insulator-to-metal transition mapped by near-field infrared microscopy.

cond-mat.str-el

Current oscillations in Vanadium Dioxide: evidence for electrically triggered percolation avalanches

In this work, we experimentally and theoretically explore voltage controlled oscillations occurring in micro-beams of vanadium dioxide. These oscillations are a result of the reversible insulator to metal phase transition in vanadium dioxide. Examining the structure of the observed oscillations in detail, we propose a modified percolative-avalanche model which allows for voltage-triggering. This model captures the periodicity and waveshape of the oscillations as well as several other key features. Importantly, our modeling shows that while temperature plays a critical role in the vanadium dioxide phase transition, electrically induced heating cannot act as the primary instigator of the oscillations in this configuration. This realization leads us to identify electric field as the most likely candidate for driving the phase transition.

cond-mat.mes-hall

Reconfigurable Gradient Index using VO2 Memory Metamaterials

We demonstrate tuning of a metamaterial device that incorporates a form of spatial gradient control. Electrical tuning of the metamaterial is achieved through a vanadium dioxide layer which interacts with an array of split ring resonators. We achieved a spatial gradient in the magnitude of permittivity, writeable using a single transient electrical pulse. This induced gradient in our device is observed on spatial sc ales on the order of one wavelength at 1 THz. Thus, we show the viability of elements for use in future devices with potential applications in beamforming and communications

cond-mat.mes-hall

Memory Metamaterials

The resonant elements that grant metamaterials their unique properties have the fundamental limitation of restricting their useable frequency bandwidth. The development of frequency-agile metamaterials has helped to alleviate these bandwidth restrictions by allowing real-time tuning of the metamaterial frequency response. We demonstrate electrically-controlled persistent frequency tuning of a metamaterial, allowing lasting modification of its response using a transient stimulus. This work demonstrates a form of memory capacitance which interfaces metamaterials with a class of devices known collectively as memory devices.

cond-mat.mes-hall

Infrared spectroscopy and nano-imaging of the insulator-to-metal transition in vanadium dioxide

We present a detailed infrared study of the insulator-to-metal transition (IMT) in vanadium dioxide (VO2) thin films. Conventional infrared spectroscopy was employed to investigate the IMT in the far-field. Scanning near-field infrared microscopy directly revealed the percolative IMT with increasing temperature. We confirmed that the phase transition is also percolative with cooling across the IMT. We present extensive near-field infrared images of phase coexistence in the IMT regime in VO2. We find that the coexisting insulating and metallic regions at a fixed temperature are static on the time scale of our measurements. A novel approach for analyzing the far-field and near-field infrared data within the Bruggeman effective medium theory was employed to extract the optical constants of the incipient metallic puddles at the onset of the IMT. We found divergent effective carrier mass in the metallic puddles that demonstrates the importance of electronic correlations to the IMT in VO2. We employ the extended dipole model for a quantitative analysis of the observed near-field infrared amplitude contrast and compare the results with those obtained with the basic dipole model.

cond-mat.str-el

Phase-transition driven memristive system

Memristors are passive circuit elements which behave as resistors with memory. The recent experimental realization of a memristor has triggered interest in this concept and its possible applications. Here, we demonstrate memristive response in a thin film of Vanadium Dioxide. This behavior is driven by the insulator-to-metal phase transition typical of this oxide. We discuss several potential applications of our device, including high density information storage. Most importantly, our results demonstrate the potential for a new realization of memristive systems based on phase transition phenomena.

cond-mat.str-el

Switching of the Mott transition based on the hole-driven MIT theory

Switching voltage of first-order metal-insulator transition (MIT) in VO_2, an inhomogeneous strongly correlated system, is changed by irradiating an infrared light with wavelength, 1.5 micrometer, and applying the electric field (photo-induced switching). This was predicted in the hole-driven MIT theory in which hole doping of a low concentration below 0.01% into conduction band (Fermi surface) induces the abrupt MIT as correlation effect. The switching is explained by the Mott transition not the Peierls transition.

cond-mat.str-el