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arXiv · 0804.2540

Effective temperature for hopping transport in a Gaussian DOS

F. Jansson·S. D. Baranovskii·F. Gebhard·R. Österbacka
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Abstract

For hopping transport in disordered materials, the mobility of charge carriers is strongly dependent on temperature and the electric field. Our numerical study shows that both the energy distribution and the mobility of charge carriers in systems with a Gaussian density of states, such as organic disordered semiconductors, can be described by a single parameter - effective temperature, dependent on the magnitude of the electric field. Furthermore, this effective temperature does not depend on the concentration of charge carriers, while the mobility does depend on the charge carrier concentration. The concept of the effective temperature is shown to be valid for systems with and without space-energy correlations in the distribution of localized states.

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F. Jansson, S. D. Baranovskii, F. Gebhard, R. Österbacka. 2008-04-16. Effective temperature for hopping transport in a Gaussian DOS. https://doi.org/10.1002/pssc.200777567

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