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arXiv · 0804.4387

Interfacial contribution to the dielectric response in semiconducting LaBiMn4/3Co2/3O6

M. Filippi·B. Kundys·R. Ranjith·A. K. Kundu·W. Prellier
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Abstract

Impedance measurements have been performed on a sintered polycrystalline sample of the perovskite LaBiMn4/3Co2/3O6. Colossal dielectric permittivity often is measured in this class of semiconducting materials as a result of extrinsic factors. Our results show that a large offset in the capacitance, measured on a series of samples with different thickness, is due to the interfacial polarization. This contribution then can be removed from the data, creating a general procedure for dielectric measurements in semiconducting samples.

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M. Filippi, B. Kundys, R. Ranjith, A. K. Kundu, W. Prellier. 2008-04-28. Interfacial contribution to the dielectric response in semiconducting LaBiMn4/3Co2/3O6. https://doi.org/10.1063/1.2929745

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