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arXiv · 0805.0334

Resistance Quenching in Graphene Interconnects

Q. Shao·G. Liu·D. Teweldebrhan·A. A. Balandin
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Abstract

We investigated experimentally the high-temperature electrical resistance of graphene interconnects. The test structures were fabricated using the focused ion beam from the single and bi-layer graphene produced by mechanical exfoliation. It was found that as temperature increases from 300 to 500K the resistance of the single- and bi-layer graphene interconnects drops down by 30% and 70%, respectively. The quenching and temperature dependence of the resistance were explained by the thermal generation of the electron-hole pairs and acoustic phonon scattering. The obtained results are important for the proposed applications of graphene as interconnects in integrated circuits.

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Q. Shao, G. Liu, D. Teweldebrhan, A. A. Balandin. 2008-05-03. Resistance Quenching in Graphene Interconnects. https://arxiv.org/abs/0805.0334

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