arXiv · 0805.1577
Spin orbit coupling in bulk ZnO and GaN
Abstract
Using group theory and Kane-like $\mathbf{k\cdot p}$ model together with the Löwdining partition method, we derive the expressions of spin-orbit coupling of electrons and holes, including the linear-$k$ Rashba term due to the intrinsic structure inversion asymmetry and the cubic-$k$ Dresselhaus term due to the bulk inversion asymmetry in wurtzite semiconductors. The coefficients of the electron and hole Dresselhaus terms of ZnO and GaN in wurtzite structure and GaN in zinc-blende structure are calculated using the nearest-neighbor $sp^3$ and $sp^3s^\ast$ tight-binding models separately.
Explore related subjects
Keep this discovery
J. Y. Fu, M. W. Wu. 2008-09-20. Spin orbit coupling in bulk ZnO and GaN. https://doi.org/10.1063/1.3018600
Cite the original work for its findings. Save a collection to share your selection of sources.