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arXiv · 0805.1818

Defect-free ZnSe nanowire and nano-needle nanostructures

Thomas Aichele·Adrien Tribu·Catherine Bougerol·Kuntheak Kheng·Regis Andre·Serge Tatarenko
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Abstract

We report on the growth of ZnSe nanowires and nano-needles using molecular beam epitaxy (MBE). Different growth regimes were found, depending on growth temperature and the Zn--Se flux ratio. By employing a combined MBE growth of nanowires and nano-needles without any post-processing of the sample, we achieved an efficient suppression of stacking fault defects. This is confirmed by transmission electron microscopy and by photoluminescence studies.

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Thomas Aichele, Adrien Tribu, Catherine Bougerol, Kuntheak Kheng, Regis Andre, Serge Tatarenko. 2008-10-08. Defect-free ZnSe nanowire and nano-needle nanostructures. https://doi.org/10.1063/1.2991298

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