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Kuntheak Kheng

Publications and source records attributed to Kuntheak Kheng.

16 recordsLinked to original sources

Cathodoluminescence Study of a Quantum Dot in a Nanowire for Single-Photon Emission

Cathodoluminescence in a scanning electron microscope was applied to a semiconductor quantum dot in a nanowire able to emit single photons. We show that cathodoluminescence can be used not only for imaging and spectroscopy, but also to measure the correlation function and characterize the purity of the single-photon emitter. The electron beam can be manipulated to minimize the collection of parasitic luminescence. At cryogenic temperatures, we observed that the thermal budget, as measured via the phonon sidebands, is close to that of non-resonant micro-photoluminescence. This makes cathodoluminescence an efficient tool in the quest of novel single-photon sources.

physics.optics↗

Calibration-free measurement of the phonon temperature around a single emitter

The emission properties of a localized solid-state emitter are strongly influenced by its environment. The coupling to acoustic phonons impacts the coherence of the emitter and its temperature dependence, and also results in the apparition of phonon sidebands besides the sharp zero-phonon line. Here, we present a method for measuring the absolute temperature of a localized emitter by directly plotting the ratio of the Stokes and anti-Stokes components of the phonon sideband as a function of the shift from the zero-phonon line. This approach requires no calibration and knowledge of the system, making it applicable to a wide range of emitters and materials. We validate the method using a CdSe quantum dot in a ZnSe nanowire. We thus show that the quantum dot is significantly heated under non-resonant excitation when increasing the incident power at low temperature and is ascribed to the drop in thermal conductivity at these temperatures.

physics.optics↗

Brightness and purity of a room-temperature single-photon source in the blue-green range

Single-photon sources are crucial for developing secure telecommunications. However, most systems operate at cryogenic temperatures. Here, we discuss a promising solid-state system emitting single photons at room temperature in the blue-green range, allowing for quantum communications in free space and underwater. The active element is a core-shell ZnSe tapered nanowire embedding a single CdSe quantum dot grown by molecular beam epitaxy. A patterned substrate enables a thorough study of the one and same nanowire by different methods. Our source exhibits anti-bunching with g(2)(0) < 0.3 near the centre of the photoluminescence line and shows high brightness. This work paves the way for developing single-photon sources operating at non-cryogenic temperatures.

physics.optics↗

Quantitative analysis of the blue-green single-photon emission from a quantum dot in a thick tapered nanowire

Quantum dots acting as single photon emitters in the blue-green range are fabricated and characterized at cryogenic temperature. They consist in CdSe dots inserted in (Zn,Mg)Se nanowires with a thick shell. Photoluminescence spectra, decay curves and autocorrelation functions were measured under nonresonant continuous-wave and pulsed excitation. An analytical approach is applied simultaneously to the decay curves and correlation functions. It allows a quantitative description of how these two quantities are affected by the exciton rise due to biexciton feeding, the bright exciton decay, the effect of the dark exciton, and the re-excitation between two laser pulses. Linewidths at our limit of resolution (200 $μ$eV) are recorded. The reported correlation counts vary from a full control by re-excitation from traps, to a small contribution of re-excitation by mobile carriers or other QDs, as low as 5%.

cond-mat.mtrl-sci↗

Enhanced Photon Extraction from a Nanowire Quantum Dot Using a Bottom-Up Photonic Shell

Semiconductor nanowires offer the possibility to grow high-quality quantum-dot heterostructures, and, in particular, CdSe quantum dots inserted in ZnSe nanowires have demonstrated the ability to emit single photons up to room temperature. In this paper, we demonstrate a bottom-up approach to fabricate a photonic fiberlike structure around such nanowire quantum dots by depositing an oxide shell using atomic-layer deposition. Simulations suggest that the intensity collected in our NA = 0.6 microscope objective can be increased by a factor 7 with respect to the bare nanowire case. Combining microphotoluminescence, decay time measurements, and numerical simulations, we obtain a fourfold increase in the collected photoluminescence from the quantum dot. We show that this improvement is due to an increase of the quantum-dot emission rate and a redirection of the emitted light. Our ex situ fabrication technique allows a precise and reproducible fabrication on a large scale. Its improved extraction efficiency is compared to state-of-the-art top-down devices.

physics.optics↗

Cathodoluminescence spectroscopy of plasmonic patch antennas: towards lower order and higher energies

We report on the cathodoluminescence characterization of Au, Al and a Au/Al bimetal circular plasmonic patch antennas, with disk diameter ranging from 150 to 900 nm. It allows us access to monomode operation of the antennas down to the fundamental dipolar mode, in contrast to previous studies on similar systems. Moreover we show that we can can shift the operation range of the antennas towards the blue spectral range by using Al. Our experimental results are compared to a semi-analytical model that provides qualitative insight on the mode structure sustained by the antennas.

physics.optics↗

Light-hole Exciton in Nanowire Quantum Dot

Quantum dots inserted inside semiconductor nanowires are extremely promising candidates as building blocks for solid-state based quantum computation and communication. They provide very high crystalline and optical properties and offer a convenient geometry for electrical contacting. Having a complete determination and full control of their emission properties is one of the key goals of nanoscience researchers. Here we use strain as a tool to create in a single magnetic nanowire quantum dot a light-hole exciton, an optically active quasiparticle formed from a single electron bound to a single light hole. In this frame, we provide a general description of the mixing within the hole quadruplet induced by strain or confinement. A multi-instrumental combination of cathodoluminescence, polarisation-resolved Fourier imaging and magneto-optical spectroscopy, allow us to fully characterize the hole ground state, including its valence band mixing with heavy hole states.

cond-mat.mes-hall↗

Deterministic radiative coupling between plasmonic nanoantennas and semiconducting nanowire quantum dots

We report on the deterministic coupling between single semiconducting nanowire quantum dots emitting in the visible and plasmonic Au nanoantennas. Both systems are separately carefully characterized through microphotoluminescence and cathodoluminescence. A two-step realignment process using cathodoluminescence allows for electron beam lithography of Au antennas near individual nanowire quantum dots with a precision of 50 nm. A complete set of optical properties are measured before and after antenna fabrication. They evidence both an increase of the NW absorption, and an improvement of the quantum dot emission rate up to a factor two in presence of the antenna.

physics.optics↗

Optical properties of single ZnTe nanowires grown at low temperature

Optically active gold-catalyzed ZnTe nanowires have been grown by molecular beam epitaxy, on a ZnTe(111) buffer layer, at low temperature 350\degree under Te rich conditions, and at ultra-low density (from 1 to 5 nanowires per micrometer^{2}. The crystalline structure is zinc blende as identified by transmission electron microscopy. All nanowires are tapered and the majority of them are <111> oriented. Low temperature micro-photoluminescence and cathodoluminescence experiments have been performed on single nanowires. We observe a narrow emission line with a blue-shift of 2 or 3 meV with respect to the exciton energy in bulk ZnTe. This shift is attributed to the strain induced by a 5 nm-thick oxide layer covering the nanowires, and this assumption is supported by a quantitative estimation of the strain in the nanowires.

cond-mat.mtrl-sci↗

Insertion of CdSe quantumdots in ZnSe nanowires : MBE growth and microstructure analysis

ZnSe nanowire growth has been successfully achieved on ZnSe (100) and (111)B buffer layers deposited on GaAs substrates. Cubic [100] oriented ZnSe nanowires or [0001] oriented hexagonal NWs are obtained on (100) substrates while [111] oriented cubic mixed with [0001] oriented hexagonal regions are obtained on (111)B substrates. Most of the NWs are perpendicular to the surface in the last case. CdSe quantum dots were successfully incorporated in the ZnSe NWs as demonstrated by transmission electron microscopy, energy filtered TEM and high angle annular dark field scanning TEM measurements.

cond-mat.mtrl-sci↗

Polarity determination in ZnSe nanowires by HAADF STEM

High angle annular dark field scanning transmission electron microscopy is used to analyze the polarity of ZnSe nanowires grown, by molecular beam epitaxy, on GaAs substrates. The experimental results are compared to simulated images in order to verify possible experimental artefacts. In this work we show that for this type of nano-objects, a residual tilt of the specimen below 15 mrad, away from the crystallographic zone axis does not impair the interpretation of the experimental images.

cond-mat.mtrl-sci↗

Subnanosecond spectral diffusion measurement using photon correlation

Spectral diffusion is a result of random spectral jumps of a narrow line as a result of a fluctuating environment. It is an important issue in spectroscopy, because the observed spectral broadening prevents access to the intrinsic line properties. However, its characteristic parameters provide local information on the environment of a light emitter embedded in a solid matrix, or moving within a fluid, leading to numerous applications in physics and biology. We present a new experimental technique for measuring spectral diffusion based on photon correlations within a spectral line. Autocorrelation on half of the line and cross-correlation between the two halves give a quantitative value of the spectral diffusion time, with a resolution only limited by the correlation set-up. We have measured spectral diffusion of the photoluminescence of a single light emitter with a time resolution of 90 ps, exceeding by four orders of magnitude the best resolution reported to date.

physics.optics↗

Photon correlation spectroscopy on a single quantum dot embedded in a nanowire

We have observed strong photoluminescence from a single CdSe quantum dot embedded in a ZnSe nanowire. Exciton, biexciton and charged exciton lines have been identified unambiguously using photon correlation spectroscopy. This technique has provided a detailed picture of the dynamics of this new system. This type of semi conducting quantum dot turns out to be a very efficient single photon source in the visible. Its particular growth technique opens new possibilities as compared to the usual self-asssembled quantum dots.

cond-mat.mtrl-sci↗

Dark exciton optical spectroscopy of a semiconducting quantum dot embedded in a nanowire

Photoluminescence of a single CdSe quantum dot embedded in a ZnSe nanowire has been investigated. It has been found that the dark exciton has a strong influence on the optical properties. The most visible influence is the strongly reduced excitonic emission compared to the biexcitonic one. Temperature dependent lifetime measurements have allowed us to measure a large splitting of $ΔE = 6 $ meV between the dark and the bright exciton as well as the spin flip rates between these two states.

cond-mat.mtrl-sci↗

Defect-free ZnSe nanowire and nano-needle nanostructures

We report on the growth of ZnSe nanowires and nano-needles using molecular beam epitaxy (MBE). Different growth regimes were found, depending on growth temperature and the Zn--Se flux ratio. By employing a combined MBE growth of nanowires and nano-needles without any post-processing of the sample, we achieved an efficient suppression of stacking fault defects. This is confirmed by transmission electron microscopy and by photoluminescence studies.

cond-mat.mtrl-sci↗

CdSe quantum dots in ZnSe nanowires as efficient source for single photons up to 220 K

ZnSe nanowire heterostructures were grown by molecular beam epitaxy in the vapour-liquid-solid growth mode assisted by gold catalysts. Size, shape and crystal structure are found to strongly depend on the growth conditions. Both, zinc-blende and wurtzite crystal structures are observed using transmission electron microscopy. At low growth temperature, cone-shaped nano-needles are formed. For higher growth temperature, the nanowires are uniform and have a high aspect ratio with sizes of 1-2 $μ$m in length and 20-50 nm in width as observed by scanning electron microscopy. Growing a nanowire on top of a nano-needle allows us to obtain very narrow nanorods with a diameter less than 10 nm and a low density of stacking fault defects. These results allow us the insertion of CdSe quantum dots in a ZnSe nanowire. An effcient photon anti-bunching was observed up to 220 K, demonstrating a high-temperature single-photon source.

cond-mat.mes-hall↗