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arXiv · 0806.2942

InAs Nanowire MOS Capacitors

Stefano Roddaro·Kristian Nilsson·Gvidas Astromskas·Lars Samuelson·Lars-Erik Wernersson·Ovol Karlstrom·Andreas Wacker
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Abstract

We present a capacitance-voltage study for arrays of vertical InAs nanowires. MOS capacitors are obtained by insulating the nanowires with a conformal 10nm HfO2 layer and using a top Cr/Au metallization as one of the capacitor's electrodes. The described fabrication and characterization technique enables a systematic investigation of the carrier density in the nanowires as well as of the quality of the MOS interface.

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Stefano Roddaro, Kristian Nilsson, Gvidas Astromskas, Lars Samuelson, Lars-Erik Wernersson, Ovol Karlstrom, Andreas Wacker. 2008-06-18. InAs Nanowire MOS Capacitors. https://arxiv.org/abs/0806.2942

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