arXiv subjects

Stefano Roddaro

Publications and source records attributed to Stefano Roddaro.

At least 19 recordsLinked to original sources

arXiv2026

Epitaxial SiGeSn alloys for CMOS-compatible thermoelectric devices

The integration of thermoelectric devices into mainstream microelectronic technological platform could be a major breakthrough in various fields within the \emph{so-called} Green-IT realm. In this article, the thermoelectric properties of heteroepitaxial SiGeSn alloys, a novel CMOS compatible material system, are evaluated to assess their possible application in thermoelectric devices. To this purpose, starting from the experimentally low lattice thermal conductivity of SiGeSn/Ge/Si layers of about $\sim$1-2 W/m$\cdot$K assessed by means of 3-$\omega$ measurements, the figure of merits are calculated through the use of Boltzmann transport equation, taking into account the relevant inter-valley scattering processes, peculiar of this multi-valley material system. Values for the figure of merit $ZT$ exceeding $1$ have been obtained for both p- and n- type material at operating temperatures within the 300---400 K range, i.e. at a typical On-Chip temperatures. In this interval, the predicted power factor also features very competitive values of the order of 20 $\rm{\mu W/cm\cdot K^2}$. Our finding indicates that this new class of Si-based materials has extremely good prospects for real-world applications, and can further stimulate scientific investigation in this ambit.

cond-mat.mtrl-sci↗

arXiv2026

Arduino based interferometer stabilizer equipped with a digital lock-in amplifier

Interferometric sensors are ubiquitous in precision metrology, yet their performance is fundamentally limited by environmental noise and thermal drift. To achieve maximum sensitivity, these systems must be actively stabilized at the quadrature point of the interference fringe. Commercial stabilization solutions, typically based on analog lock-in amplifiers or FPGA architectures, are often prohibitively expensive and do not not offer the flexibility needed for custom experimental setups. In this work, we present an open-source, compact and low-cost digital stabilization system built upon the dual-core Arduino Giga R1 microcontroller. The system features a custom analog front-end with programmable gain amplifiers (PGAs) and active signal conditioning, enabling direct integration with standard amplified photodiodes. We implement a firmware-based digital lock-in amplifier running at a 100 kHz sampling rate, which performs real-time demodulation and PID feedback control without the latency bottlenecks of PC-based loops. Experimental characterization demonstrates that the system effectively suppresses long-term thermal drift and actively rejects external perturbations. The resulting device provides a standalone, Arduino-based alternative for laser frequency stabilization and interferometric control in educational and research laboratories.

physics.optics↗

arXiv2024

Tailoring coherent charge transport in graphene by deterministic defect generation

Harnessing the wave-nature of charge carriers in solid state devices, electron optics investigates and exploits coherent phenomena, in analogy with optics and photonics. Typically, this requires complex electronic devices leveraging macroscopically coherent charge transport in two-dimensional electron gases and superconductors. Here, collective coherent effects are induced in a simple counterintuitive architecture by defect engineering. Deterministically introduced lattice defects in graphene enable the phase coherent charge transport by playing the role of potential barriers, instead of scattering centres as conventionally considered. Thus, graphene preserves its quasi-ballistic quantum transport and can support phase-matched charge carrier waves. Based on this approach, multiple electronic Fabry-P\`erot cavities are formed by creating periodically alternating defective and pristine nano-stripes through low energy electron-beam irradiation. Indeed, defective stripes behave as partially reflecting mirrors and resonantly confine the charge carrier waves within the pristine areas, giving rise to Fabry-P\`erot resonant modes. These modes experimentally manifest as sheet resistance oscillations, as also confirmed by Landauer-B\"uttiker simulations. Moreover, these coherent phenomena survive up to 30 K for both polarities of charge carriers, contrarily to traditional monopolar electrostatically created Fabry-P\`erot interferometers. Our study positions defective graphene as an innovative platform for coherent electronic devices, with potential applications in nano and quantum technologies.

cond-mat.mes-hall↗

arXiv2024

Ultrafast nano generation of acoustic waves in water via a single carbon nanotube

Generation of ultra high frequency acoustic waves in water is key to nano resolution sensing, acoustic imaging and theranostics. In this context water immersed carbon nanotubes (CNTs) may act as an ideal optoacoustic source, due to their nanometric radial dimensions, peculiar thermal properties and broad band optical absorption. The generation mechanism of acoustic waves in water, upon excitation of both a single-wall (SW) and a multi-wall (MW) CNT with laser pulses of temporal width ranging from 5 ns down to ps, is theoretically investigated via a multi-scale approach. We show that, depending on the combination of CNT size and laser pulse duration, the CNT can act as a thermophone or a mechanophone. As a thermophone, the CNT acts as a nanoheater for the surrounding water, which, upon thermal expansion, launches the pressure wave. As a mechanophone, the CNT acts as a nanopiston, its thermal expansion directly triggering the pressure wave in water. Activation of the mechanophone effect is sought to trigger few nanometers wavelength sound waves in water, matching the CNT acoustic frequencies. This is at variance with respect to the commonly addressed case of water-immersed single metallic nano-objects excited with ns laser pulses, where only the thermophone effect significantly contributes. The present findings might be of impact in fields ranging from nanoscale non-destructive testing to water dynamics at the meso- to nano-scale.

cond-mat.mes-hall↗

arXiv2024

Active electron cooling of graphene

In the emergent field of quantum technology, the ability to manage heat at the nanoscale and in cryogenic conditions is crucial for enhancing device performance in terms of noise, coherence, and sensitivity. Here, we demonstrate the active cooling and refrigeration of the electron gas in a graphene thermal transistor, by taking advantage of nanoscale superconductive tunnel contacts able to pump or extract heat directly from the electrons in the device. Our prototypes achieved a top cooling of electrons in graphene of about 15 mK at a bath temperature of about 450 mK, demonstrating the viability of the proposed device architecture. Our experimental findings are backed by a detailed thermal model that accurately replicated the observed device behavior. Alternative cooling schemes and perspectives are discussed in light of the reported results. Finally, our graphene thermal transistor could find application in superconducting hybrid quantum technologies.

cond-mat.mes-hall↗

arXiv2023

Superconductivity induced by gate-driven hydrogen intercalation in the charge-density-wave compound 1T-TiSe2

Hydrogen (H) plays a key role in the near-to-room temperature superconductivity of hydrides at megabar pressures. This suggests that H doping could have similar effects on the electronic and phononic spectra of materials at ambient pressure as well. Here, we demonstrate the non-volatile control of the electronic ground state of titanium diselenide (1T-TiSe$_2$) via ionic liquid gating-driven H intercalation. This protonation induces a superconducting phase, observed together with a charge-density wave through most of the phase diagram, with nearly doping-independent transition temperatures. The H-induced superconducting phase is possibly gapless-like and multi-band in nature, in contrast with those induced in TiSe$_2$ via copper, lithium, and electrostatic doping. This unique behavior is supported by ab initio calculations showing that high concentrations of H dopants induce a full reconstruction of the bandstructure, although with little coupling between electrons and high-frequency H phonons. Our findings provide a promising approach for engineering the ground state of transition metal dichalcogenides and other layered materials via gate-controlled protonation.

cond-mat.supr-con↗

arXiv2023

Optical grade bromide-based thin film electrolytes

Controlling the charge density in low-dimensional materials with an electrostatic potential is a powerful tool to explore and influence their electronic and optical properties. Conventional solid gates impose strict geometrical constraints to the devices and often absorb electromagnetic radiation in the infrared (IR) region. A powerful alternative is ionic liquid (IL) gating. This technique only needs a metallic electrode in contact with the IL and the highest achievable electric field is limited by the electrochemical interactions of the IL with the environment. Despite the excellent gating properties, a large number of ILs is hardly exploitable for optical experiments in the mid-IR region, because they typically suffer from low optical transparency and degradation in ambient conditions. Here, we report the realization of two electrolytes based on bromide ILs dissolved in polymethyl methacrylate (PMMA). We demonstrate that such electrolytes can induce state-of-the-art charge densities as high as $20\times10^{15}\ \mathrm{cm^{-2}}$. Thanks to the low water absorption of PMMA, they work both in vacuum and in ambient atmosphere after a simple vacuum curing. Furthermore, our electrolytes can be spin coated into flat thin films with optical transparency in the range from 600 cm$^{-1}$ to 4000 cm$^{-1}$. Thanks to these properties, the electrolytes are excellent candidates to fill the gap as versatile gating layers for electronic and mid-IR optoelectronic devices.

cond-mat.mes-hall↗

arXiv2023

Bipolar Thermoelectricity in Bilayer-Graphene--Superconductor Tunnel Junctions

We investigate the thermoelectric properties of a hybrid nanodevice composed by a 2D carbon based material and a superconductor. This system presents nonlinear bipolar thermoelectricity as induced by the spontaneous breaking of the Particle-Hole (PH) symmetry in a tunnel junction between a BiLayer Graphene (BLG) and a Bardeen-Cooper-Schrieffer (BCS) superconductor. In this scheme, the nonlinear thermoelectric effect, predicted and observed in SIS' junctions is not affected by the competitive effect of the Josephson coupling. From a fundamental perspective, the most intriguing feature of this effect is its bipolarity. The capability to open and control the BLG gap guarantees improved thermoelectric performances, that reach up to 1 mV/K regarding the Seebeck coefficient and a power density of 1 nW/$μ$m$^2$ for temperature gradients of tens of Kelvins. Furthermore, the externally controlled gating can also dope the BLG, which is otherwise intrinsically PH symmetric, giving us the opportunity to investigate the bipolar thermoelectricity even in presence of a controlled suppression of the PH symmetry. The predicted robustness of this system could foster further experimental investigations and applications in the near future, thanks to the available techniques of nano-fabrication.

cond-mat.mes-hall↗

arXiv2022

Probing enhanced electron-phonon coupling in graphene by infrared resonance Raman spectroscopy

We report on resonance Raman spectroscopy measurements with excitation photon energy down to 1.16 eV on graphene, to study how low-energy carriers interact with lattice vibrations. Thanks to the excitation energy close to the Dirac point at $\mathbf{K}$, we unveil a giant increase of the intensity ratio between the double-resonant 2D and 2D$^\prime$ peaks with respect to that measured in graphite. Comparing with fully \textit{ab initio} theoretical calculations, we conclude that the observation is explained by an enhanced, momentum-dependent coupling between electrons and Brillouin zone-boundary optical phonons. This finding applies to two dimensional Dirac systems and has important consequences for the modeling of transport in graphene devices operating at room temperature.

cond-mat.mes-hall↗

arXiv2022

Strain-engineered wrinkles on graphene using polymeric actuators

The electronic and optical properties of graphene can be precisely tuned by generating deterministic arrangements of strain features. In this paper, we report the formation of widespread and controlled buckling delamination of monolayer graphene deposited on hexagonal boron-nitride promoted by a significant squeezing of the graphene flake and induced by polymeric micro-actuators. The flexibility of this method offers a promising technique to create arbitrary buckling geometries and arrays of wrinkles which could also be subjected to iterative folding-unfolding cycles. Further development of this method could pave the way to tune the properties of several kinds of other two-dimensional materials, such as transition metal dichalcogenides, by tailoring their surface topography.

cond-mat.mtrl-sci↗

arXiv2022

Unexpected Electron Transport Suppression in a Heterostructures Graphene MoS2 Multiple Field-Effect Transistor Architecture

We demonstrate a graphene-MoS2 architecture integrating multiple field-effect transistors and we independently probe and correlate the conducting properties of van der Waals coupled graphene-MoS2 contacts with the ones of the MoS2 channels. Devices are fabricated starting from high-quality single-crystal monolayers grown by chemical vapor deposition and characterized by scanning Raman and photoluminescence spectroscopies. Transconductance curves of MoS2 are compared with the current-voltage characteristics of graphene contact stripes, revealing a significant suppression of transport on the n-side of the transconductance curve. Based on ab-initio modeling, the effect is understood in terms of trapping by sulfur vacancies, which counter-intuitively depends on the field-effect, even though the graphene contact layer is positioned between the backgate and the MoS2 channel.

cond-mat.mes-hall↗

arXiv2021

Electron localization in periodically strained graphene

Pseudo-magnetic field (PMF) in deformed graphene has been proposed as a promising and flexible method to quantum-confine electronic states and create gaps in the local density of states. Motivated by this perspective, we numerically analyze various different configurations leading to electronic localization and band flattening in periodically strained graphene. In particular, we highlight the existence of a fine structure in the pseudo-Landau levels confined in large-PMF regions, the emergence of states confined to PMF nodes as well as of snake-like orbits. In our paper, we further analyze the importance of the relative rotation and asymmetry of the strain lattice with respect to the atomic lattice and show how it can be used to modulate the PMF periodicity and to create localized orbits far from the strain points. Possible implementations and applications of the simulated structures are discussed.

cond-mat.mes-hall↗

arXiv2021

Electrostatic field-driven supercurrent suppression in ionic-gated metallic Josephson nanotransistors

Recent experiments have shown the possibility of tuning the transport properties of metallic nanosized superconductors through a gate voltage. These results renewed the longstanding debate on the interaction between electrostatic fields and superconductivity. Indeed, different works suggested competing mechanisms as the cause of the effect: an unconventional electric field-effect or quasiparticle injection. Here, we provide conclusive evidence for the electrostatic-field-driven control of the supercurrent in metallic nanosized superconductors, by realizing ionic-gated superconducting field-effect nanotransistors (ISFETs) where electron injection is impossible. Our Nb ISFETs show giant suppression of the superconducting critical current of up to 45%. Moreover, the bipolar supercurrent suppression observed in different ISFETs, together with invariant critical temperature and normal-state resistance, also excludes conventional charge accumulation/depletion. Therefore, the microscopic explanation of this effect calls upon a novel theory able to describe the nontrivial interaction of static electric fields with conventional superconductivity.

cond-mat.supr-con↗

arXiv2021

A Roadmap for Controlled and Efficient n-type Doping of Self-assisted GaAs Nanowires Grown by Molecular Beam Epitaxy

N-type doping of GaAs nanowires has proven to be difficult because the amphoteric character of silicon impurities is enhanced by the nanowire growth mechanism and growth conditions. The controllable growth of n-type GaAs nanowires with carrier density as high as 1020 electron/cm3 by self-assisted molecular beam epitaxy using Te donors is demonstrated here. Carrier density and electron mobility of highly doped nanowires are extracted through a combination of transport measurement and Kelvin probe force microscopy analysis in single-wire field-effect devices. Low-temperature photoluminescence is used to characterize the Te-doped nanowires over several orders of magnitude of the impurity concentration. The combined use of those techniques allows the precise definition of the growth conditions required for effective Te incorporation.

cond-mat.mtrl-sci↗

arXiv2020

Stress-strain in electron-beam activated polymeric micro-actuators

Actuation of thin polymeric films via electron irradiation is a promising avenue to realize devices based on strain engineered two dimensional (2D) materials. Complex strain profiles demand a deep understanding of the mechanics of the polymeric layer under electron irradiation; in this article we report a detailed investigation on electron-induced stress on poly-methyl-methacrylate (PMMA) thin film material. After an assessment of stress values using a method based on dielectric cantilevers, we directly investigate the lateral shrinkage of PMMA patterns on epitaxial graphene, which reveals a universal behavior, independent of the electron acceleration energy. By knowing the stress-strain curve, we finally estimate an effective Young's modulus of PMMA on top of graphene which is a relevant parameter for PMMA based electron-beam lithography and strain engineering applications.

cond-mat.mes-hall↗

arXiv2020

Electron cooling with graphene-insulator-superconductor tunnel junctions and applications to fast bolometry

Electronic cooling in hybrid normal metal-insulator-superconductor junctions is a promising technology for the manipulation of thermal loads in solid state nanosystems. One of the main bottlenecks for efficient electronic cooling is the electron-phonon coupling, as it represents a thermal leakage channel to the phonon bath. Graphene is a two-dimensional material that exhibits a weaker electron-phonon coupling compared to standard metals. For this reason, we study the electron cooling in graphene-based systems consisting of a graphene sheet contacted by two insulator/superconductor junctions. We show that, by properly biasing the graphene, its electronic temperature can reach base values lower than those achieved in similar systems based on metallic ultra-thin films. Moreover, the lower electron-phonon coupling is mirrored in a lower heat power pumped into the superconducting leads, thus avoiding their overheating and preserving the cooling mechanisms. Finally, we analyze the possible application of cooled graphene as a bolometric radiation sensor. We study its main figures of merit, i.e. responsivity, noise equivalent power and response time. In particular, we show that the built-in electron refrigeration allows reaching a responsivity of the order of 50 nA/pW and a noise equivalent power of order of $\rm 10^{-18}\, W\, Hz^{-1/2}$ while the response speed is about 10 ns, corresponding to a thermal bandwidth in the order of 20MHz.

cond-mat.mes-hall↗

arXiv2020

Programmable quantum Hall bisector: towards a novel resistance standard for quantum metrology

We demonstrate a programmable quantum Hall circuit that implements a novel iterative voltage bisection scheme and allows obtaining any binary fraction $(k/2^n)$ of the fundamental resistance quantum $R_K/2=h/2e^2$. The circuit requires a number $n$ of bisection stages that only scales logarithmically with the precision of the fraction. The value of $k$ can be set to any integer between 1 and $2^n$ by proper gate configuration. The architecture exploits gate-controlled routing, mixing and equilibration of edge modes of robust quantum Hall states. The device does not contain {\em any} internal ohmic contact potentially leading to spurious voltage drops. Our scheme addresses key critical aspects of quantum Hall arrays of resistance standards, which are today widely studied and used to create custom calibration resistances. The approach is demonstrated in a proof-of-principle two-stage bisection circuit built on a high-mobility GaAs/AlGaAs heterostructure operating at a temperature of $260\,{\rm mK}$ and a magnetic field of $4.1\,{\rm T}$.

cond-mat.mes-hall↗

arXiv2020

Strategy for accurate thermal biasing at the nanoscale

We analyze the benefits and shortcomings of a thermal control in nanoscale electronic conductors by means of the contact heating scheme. Ideally, this straightforward approach allows one to apply a known thermal bias across nanostructures directly through metallic leads, avoiding conventional substrate intermediation. We show, by using the average noise thermometry and local noise sensing technique in InAs nanowire based devices, that a nanoscale metallic constriction on a SiO2 substrate acts like a diffusive conductor with negligible electron-phonon relaxation and non-ideal leads. The non-universal impact of the leads on the achieved thermal bias -- which depends on their dimensions, shape and material composition -- is hard to minimize, but is possible to accurately calibrate in a properly designed nano-device. Our results allow to reduce the issue of the thermal bias calibration to the knowledge of the heater resistance and pave the way for accurate thermoelectric or similar measurements at the nanoscale.

cond-mat.mes-hall↗