Electron drift velocity control in GaAs-in-Al2O3 quantum wire transistor structure due to the electron scattering rate alteration

Andrei Borzdov; Dmitry Pozdnyakov; Vladimir Borzdov

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arXiv · 0806.3181

Electron drift velocity control in GaAs-in-Al2O3 quantum wire transistor structure due to the electron scattering rate alteration

Andrei Borzdov·Dmitry Pozdnyakov·Vladimir Borzdov

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Abstract

Electron transport in the transistor structure based on thin undoped GaAs-in-Al2O3 quantum wire is simulated by ensemble Monte-Carlo method taking into account electron scattering by the phonons and surface roughness. The influence of surface roughness height on electron drift velocity at 77 and 300 K is investigated for the values of longitudinal electric field strength of 0.1 and 1.0 kV/cm. A possibility of electron drift velocity control due to variation of the bias applied to the gates, which results in the electron scattering rate alteration, is ascertained.

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Andrei Borzdov, Dmitry Pozdnyakov, Vladimir Borzdov. 2008-06-19. Electron drift velocity control in GaAs-in-Al2O3 quantum wire transistor structure due to the electron scattering rate alteration. https://arxiv.org/abs/0806.3181

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