arXiv subjects

Vladimir Borzdov

Publications and source records attributed to Vladimir Borzdov.

4 recordsLinked to original sources

arXiv2008

Electron drift velocity control in GaAs-in-Al2O3 quantum wire transistor structure due to the electron scattering rate alteration

Electron transport in the transistor structure based on thin undoped GaAs-in-Al2O3 quantum wire is simulated by ensemble Monte-Carlo method taking into account electron scattering by the phonons and surface roughness. The influence of surface roughness height on electron drift velocity at 77 and 300 K is investigated for the values of longitudinal electric field strength of 0.1 and 1.0 kV/cm. A possibility of electron drift velocity control due to variation of the bias applied to the gates, which results in the electron scattering rate alteration, is ascertained.

cond-mat.mes-hall↗

arXiv2006

Self-consistent calculations of phonon scattering rates in GaAs transistor structure with one-dimensional electron gas

Self-consistent calculations of acoustic and polar optical phonon scattering rates in GaAs quantum wire transistor structures were carried out with account of collisional broadening. The influence of the gate bias on the scattering rates was examined, too. It was shown that in order to treat the scattering rates rigorously it is important to search for electron energy levels by means of the self-consistent solution of Schrodinger and Poisson equations and to take into account the collisional broadening.

cond-mat.mes-hall↗

arXiv2006

Ionized Impurity and Surface Roughness Scattering Rates of Electrons in Semiconductor Structures with One-Dimensional Electron Gas and Broadened Energy Levels

An approach to calculation of the ionized impurity and surface roughness scattering rates of electrons in very thin semiconductor quantum wires taking into account the energy level broadening is worked out. It is assumed that all the electrons in the structure are in the electric quantum limit. The screening is taken into account while considering the ionized impurity scattering. Comparison of the surface roughness scat-tering rates calculated using the exponential and Gaussian autocorrelation functions is done.

cond-mat.mes-hall↗

arXiv2006

Electron transport in armchair single-wall carbon nanotubes

The rates of electron scattering via phonons in the armchair single-wall carbon nanotubes were calculated by using the improved scattering theory within the tight-binding approximation. Therefore, the problem connected with the discrepancy of the scattering rates calculated in the framework of the classical scattering theory and ones predicted by experimental data was clarified. Then these results were used for the solving of the kinetic Boltzmann equation to describe electron transport properties of the nanotubes. The equation was solved numerically by using both the finite difference approach and the Monte Carlo simulation procedure.

cond-mat.mes-hall↗