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arXiv · 0807.0748

Strain-Control of the magnetic anisotropy in (Ga,Mn)(As,P) ferromagnetic semiconductor layers

Aristide Lemaître·Audrey Miard·Laurent Travers·Olivia Mauguin·Ludovic Largeau·Catherine Gourdon·Vincent Jeudy·Michael Tran·Jean-Marie George
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Abstract

A small fraction of phosphorus (up to 10 %) was incorporated in ferromagnetic (Ga,Mn)As epilayers grown on a GaAs substrate. P incorporation allows reducing the epitaxial strain or even change its sign, resulting in strong modifications of the magnetic anisotropy. In particular a reorientation of the easy axis toward the growth direction is observed for high P concentration. It offers an interesting alternative to the metamorphic approach, in particular for magnetization reversal experiments where epitaxial defects stongly affect the domain wall propagation.

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Aristide Lemaître, Audrey Miard, Laurent Travers, Olivia Mauguin, Ludovic Largeau, Catherine Gourdon, Vincent Jeudy, Michael Tran, Jean-Marie George. 2008-07-04. Strain-Control of the magnetic anisotropy in (Ga,Mn)(As,P) ferromagnetic semiconductor layers. https://doi.org/10.1063/1.2963979

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