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arXiv · 0807.4942

Mott Relation for Anomalous Hall and Nernst effects in Ga1-xMnxAs Ferromagnetic Semiconductors

Yong Pu·Daichi Chiba·Fumihiro Matsukura·Hideo Ohno·Jing Shi
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Abstract

The Mott relation between the electrical and thermoelectric transport coefficients normally holds for phenomena involving scattering. However, the anomalous Hall effect (AHE) in ferromagnets may arise from intrinsic spin-orbit interaction. In this work, we have simultaneously measured AHE and the anomalous Nernst effect (ANE) in Ga1-xMnxAs ferromagnetic semiconductor films, and observed an exceptionally large ANE at zero magnetic field. We further show that AHE and ANE share a common origin and demonstrate the validity of the Mott relation for the anomalous transport phenomena.

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Yong Pu, Daichi Chiba, Fumihiro Matsukura, Hideo Ohno, Jing Shi. 2008-09-12. Mott Relation for Anomalous Hall and Nernst effects in Ga1-xMnxAs Ferromagnetic Semiconductors. https://doi.org/10.1103/physrevlett.101.117208

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