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arXiv · 0808.1864

Epitaxial growth and anisotropy of La(O,F)FeAs thin films deposited by Pulsed Laser Deposition

E. Backen·S. Haindl·T. Niemeier·T. Freudenberg·J. Werner·G. Behr·L. Schultz·B. Holzapfel
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Abstract

LaFeAsO1-xFx thin films were deposited successfully on (001)-oriented LaAlO3 and MgO substrates from stoichiometric LaFeAsO1-xFx polycrystalline targets with fluorine concentrations up to x = 0.25 by PLD. Room temperature deposition and post annealing of the films yield nearly phase pure films with a pronounced c-axis texture and a strong biaxial in-plane orientation. Transport measurements show metallic resistance and onset of superconductivity at 11 K. Hc2(T) was determined by resistive measurements and yield Hc2 values of 3 T at 3.6 K for B||c and 6 T at 6.4 K for B||ab.

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E. Backen, S. Haindl, T. Niemeier, T. Freudenberg, J. Werner, G. Behr, L. Schultz, B. Holzapfel. 2008-08-14. Epitaxial growth and anisotropy of La(O,F)FeAs thin films deposited by Pulsed Laser Deposition. https://doi.org/10.1088/0953-2048%2F21%2F12%2F122001

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