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arXiv · 0808.1981

Planar Heterostructure Graphene -- Narrow-Gap Semiconductor -- Graphene

P. V. Ratnikov·A. P. Silin
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Abstract

We investigate a planar heterostructure composed of two graphene films separated by a narrow-gap semiconductor ribbon. We show that there is no the Klein paradox when the Dirac points of the Brillouin zone of graphene are in a band gap of a narrow-gap semiconductor. There is the energy range depending on an angle of incidence, in which the above-barrier damped solution exists. Therefore, this heterostructure is a "filter" transmitting particles in a certain range of angles of incidence upon a potential barrier. We discuss the possibility of an application of this heterostructure as a "switch".

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P. V. Ratnikov, A. P. Silin. 2008-08-14. Planar Heterostructure Graphene -- Narrow-Gap Semiconductor -- Graphene. https://doi.org/10.3103/s106833560811002x

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