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A. P. Silin

Publications and source records attributed to A. P. Silin.

13 recordsLinked to original sources
arXiv2022

Trion gas, electron-hole liquid, and metal-insulator transition in doped heterostructures based on transition metal dichalcogenides

The effect of doping on the parameters of an electron-hole liquid (EHL) in heterostructures based on transition metal dichalcogenides is studied. The phase diagram of the EHL is constructed. It is shown that for the formation of a high-temperature tightly bound EHL, as well as for the transition from the semiconducting (exciton) state to the semimetallic one (electron-hole plasma/liquid), it is advantageous to dope the energy band with larger number of valleys. The transition from trion gas to electron-hole plasma is investigated using the modified Mott criterion and variational calculation with screened potential. The effect of doping on the metal--insulator transition in the equilibrium case without laser excitation is studied.

cond-mat.mes-hall↗
arXiv2021

Phase diagram of electron-hole liquid in monolayer heterostructures based on transition metal dichalcogenides

In the last few years, interest in monomolecular layers of transition metal dichalcogenides (TMDs) has been driven by their unusual electronic and optical properties, which are very attractive for designing functional elements of new generation nanoelectronics. Recently, experimental evidence has appeared for the formation of a high-temperature strongly bound electron-hole liquid (EHL) in TMD monolayers. Strong binding of charge carriers is due to a significant decrease in the screening of the Coulomb interaction in monolayer heterostructures. In this work, the gas--liquid phase transition in a system of electrons and holes in quasi-two-dimensional heterostructures based on TMDs is considered and the critical parameters of such a transition are calculated. The metal-insulator transition is described and the phase diagram for such heterostructures is constructed.

cond-mat.mes-hall↗
arXiv2020

Electron-Hole Liquid in Monolayer Transition Metal Dichalcogenide Heterostructures

Monolayer films of transition metal dichalcogenides (in particular, MoS2, MoSe2, WS2, and WSe2) can be considered as ideal systems for the studies of high-temperature electron-hole liquids. The quasi-two-dimensional nature of electrons and holes ensures their stronger interaction as compared to that in bulk semiconductors. The screening of the Coulomb interaction in monolayer heterostructures is significantly reduced, since it is determined by the permittivities of the environment (e.g., vacuum and substrate), which are much lower than those characteristic of the films of transition metal dichalcogenides. The multivalley structure of the energy spectrum of charge carriers in transition metal dichalcogenides significantly reduces the kinetic energy, resulting in the increase in the equilibrium density and binding energy of the electron-hole liquid. The binding energy of the electron-hole liquid and its equilibrium density are determined. It is shown that the two-dimensional Coulomb potential should be used in the calculations for the electron-hole liquid.

cond-mat.mes-hall↗
arXiv2016

Plasmons in a Planar Graphene Superlattice

Plasmon collective excitations are studied in a planar graphene superlattice formed by periodically alternating regions of gapless graphene and of its gapped modification. The plasmon dispersion law is determined both for the quasi-one-dimensional case (the Fermi level is located within the minigap) and for the quasi-two-dimensional case (the Fermi level is located within the miniband). The problem concerning the absorption of modulated electromagnetic radiation at the excitation of plasmons is also considered.

cond-mat.mes-hall↗
arXiv2014

Novel Type of Superlattices Based on Gapless Graphene with the Alternating Fermi Velocity

We study a novel type of graphene-based superlattices formed owing to a periodic modulation of the Fermi surface. Such a modulation is possible for graphene deposited on a striped substrate made of materials with substantially different values of the dc permittivity. Similar superlattices appear also in graphene sheets applied over substrates with a periodic array of parallel grooves. We suggest a model describing such superlattices. Using the transfer-matrix technique, we determine the dispersion relation and calculate the energy spectrum of these superlattices. We also analyze at a qualitative level the current--voltage characteristics of the system under study.

cond-mat.mes-hall↗
arXiv2012

Size Quantization in Planar Graphene-Based Heterostructures: Pseudospin Splitting, Interface States, and Excitons

A planar quantum-well device made of a gapless graphene nanoribbon with edges in contact with gapped graphene sheets is examined. The size-quantization spectrum of charge carriers in an asymmetric quantum well is shown to exhibit a pseudospin splitting. Interface states of a new type arise from the crossing of dispersion curves of gapless and gapped graphene materials. The exciton spectrum is calculated for a planar graphene quantum well. The effect of an external electric field on the exciton spectrum is analyzed.

cond-mat.mes-hall↗
arXiv2012

Boundary States in Graphene Heterojunctions

A new type of states in graphene-based planar heterojunctions has been studied in the envelope wave function approximation. The condition for the formation of these states is the intersection between the dispersion curves of graphene and its gap modification. This type of states can also occur in smooth graphene-based heterojunctions.

cond-mat.mes-hall↗
arXiv2008

Quantum Well Based on Graphene and Narrow-Gap Semiconductors

We consider the energy spectrum of the planar quantum well which consisted of two ribbons of narrow-gap semiconductors and a graphene ribbon between ones. It is shown that the gapless mode appears only in case of inverted narrow-gap semiconductors. Spin splitting of the energy spectrum for a nonsymmetric quantum well is calculated taking into account a specificity of graphene. We investigate interface states and optical transitions. It is shown that the optical transitions are possible only with a conservation of a parity.

cond-mat.other↗
arXiv2008

Planar Heterostructure Graphene -- Narrow-Gap Semiconductor -- Graphene

We investigate a planar heterostructure composed of two graphene films separated by a narrow-gap semiconductor ribbon. We show that there is no the Klein paradox when the Dirac points of the Brillouin zone of graphene are in a band gap of a narrow-gap semiconductor. There is the energy range depending on an angle of incidence, in which the above-barrier damped solution exists. Therefore, this heterostructure is a "filter" transmitting particles in a certain range of angles of incidence upon a potential barrier. We discuss the possibility of an application of this heterostructure as a "switch".

cond-mat.mtrl-sci↗
arXiv2008

Ground State Energy of Current Carriers in Graphene

The ground state energy of current carriers in graphene considered as a zero-gap semiconductor was calculated in the two-band approximation. The condition of the electronic (hole) system stability in graphene was obtained. The possibility of the zero-gap semiconductor-semimetal transition was discussed.

cond-mat.other↗
arXiv1998

Quantum mechanics with coordinate-dependent mass

We study a motion of quantum particles, whose properties depend on one coordinate so that they can move freely in the perpendicular direction. A rotationally-symmetric Hamiltonian is derived and applied to study a general interface formed between two semiconductors. We predict a new type of electron states, localized at the interface. They appear whenever the two bulk dispersions intersect. These shallow states lie near the point of intersection and are restricted to a finite range of perpendicular momentum. The scattering of carriers by the interface is discussed.

cond-mat↗
arXiv1998

Interface states in junctions of two semiconductors with intersecting dispersion curves

A novel type of shallow interface state in junctions of two semiconductors without band inversion is identified within the envelope function approximation, using the two-band model. It occurs in abrupt junctions when the interband velocity matrix elements of the two semiconductors differ and the bulk dispersion curves intersect. The in-plane dispersion of the interface state is found to be confined to a finite range of momenta centered around the point of intersection. These states turn out to exist also in graded junctions, with essentially the same properties as in the abrupt case.

cond-mat↗