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arXiv · 0808.3388

Quantum Well Based on Graphene and Narrow-Gap Semiconductors

P. V. Ratnikov·A. P. Silin
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Abstract

We consider the energy spectrum of the planar quantum well which consisted of two ribbons of narrow-gap semiconductors and a graphene ribbon between ones. It is shown that the gapless mode appears only in case of inverted narrow-gap semiconductors. Spin splitting of the energy spectrum for a nonsymmetric quantum well is calculated taking into account a specificity of graphene. We investigate interface states and optical transitions. It is shown that the optical transitions are possible only with a conservation of a parity.

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P. V. Ratnikov, A. P. Silin. 2008-08-25. Quantum Well Based on Graphene and Narrow-Gap Semiconductors. https://doi.org/10.3103/s106833560902002x

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