On the possibility of tunable-gap bilayer graphene FET

G. Fiori; G. Iannaccone

doi:10.1109/led.2008.2010629

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arXiv · 0810.0128

On the possibility of tunable-gap bilayer graphene FET

G. Fiori·G. Iannaccone

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Abstract

We explore the device potential of tunable-gap bilayer graphene FET exploiting the possibility of opening a bandgap in bilayer graphene by applying a vertical electric field via independent gate operation. We evaluate device behavior using atomistic simulations based on the self-consistent solution of the Poisson and Schroedinger equations within the NEGF formalism. We show that the concept works, but bandgap opening is not strong enough to suppress band-to-band tunneling in order to obtain a sufficiently large Ion/Ioff ratio for CMOS device operation.

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G. Fiori, G. Iannaccone. 2008-10-01. On the possibility of tunable-gap bilayer graphene FET. https://doi.org/10.1109/led.2008.2010629

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