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arXiv · 0810.4679

The magnetoresistance tensor of La(0.8)Sr(0.2)MnO(3)

Y. Bason·J. Hoffman·C. H. Ahn·L. Klein
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Abstract

We measure the temperature dependence of the anisotropic magnetoresistance (AMR) and the planar Hall effect (PHE) in c-axis oriented epitaxial thin films of La(0.8)Sr(0.2)MnO(3), for different current directions relative to the crystal axes, and show that both AMR and PHE depend strongly on current orientation. We determine a magnetoresistance tensor, extracted to 4th order, which reflects the crystal symmetry and provides a comprehensive description of the data. We extend the applicability of the extracted tensor by determining the bi-axial magnetocrystalline anisotropy in our samples.

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Y. Bason, J. Hoffman, C. H. Ahn, L. Klein. 2008-10-26. The magnetoresistance tensor of La(0.8)Sr(0.2)MnO(3). https://doi.org/10.1103/physrevb.79.092406

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