Single shot measurement of a silicon single electron transistor

D. G. Hasko; T. Ferrus; Q. R. Morrissey; S. R. Burge; E. J. Freeman; M. J. French; A. Lam; L. Creswell; R. J. Collier; D. A. Williams; G. A. D. Briggs

doi:10.1063/1.3028344

arXiv · 0811.0736

Single shot measurement of a silicon single electron transistor

D. G. Hasko·T. Ferrus·Q. R. Morrissey·S. R. Burge·E. J. Freeman·M. J. French·A. Lam·L. Creswell·R. J. Collier·D. A. Williams·G. A. D. Briggs

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Abstract

We have fabricated a custom cryogenic Complementary Metal-Oxide-Semiconductor (CMOS) integrated circuit that has a higher measurement bandwidth compared with conventional room temperature electronics. This allowed implementing single shot operations and observe the real-time evolution of the current of a phosphorous-doped silicon single electron transistor that was irradiated with a microwave pulse. Relaxation times up to 90 us are observed, suggesting the presence of well isolated electron excitations within the device. It is expected that these are associated with long decoherence time and the device may be suitable for quantum information processing.

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D. G. Hasko, T. Ferrus, Q. R. Morrissey, S. R. Burge, E. J. Freeman, M. J. French, A. Lam, L. Creswell, R. J. Collier, D. A. Williams, G. A. D. Briggs. 2008-11-21. Single shot measurement of a silicon single electron transistor. https://doi.org/10.1063/1.3028344

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