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arXiv · 0812.2974

Resistance noise in electrically biased bilayer graphene

Atindra Nath Pal·Arindam Ghosh
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Abstract

We demonstrate that the low-frequency resistance fluctuations, or noise, in bilayer graphene is strongly connected to its band structure, and displays a minimum when the gap between the conduction and valence band is zero. Using double-gated bilayer graphene devices we have tuned the zero gap and charge neutrality points independently, which offers a versatile mechanism to investigate the low-energy band structure, charge localization and screening properties of bilayer graphene.

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Atindra Nath Pal, Arindam Ghosh. 2008-12-16. Resistance noise in electrically biased bilayer graphene. https://doi.org/10.1103/physrevlett.102.126805

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