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Arindam Ghosh

Publications and source records attributed to Arindam Ghosh.

At least 19 recordsLinked to original sources
arXiv2026

Polarization engineered all 2D Graphene/Ferroelectric hybrid for persistence-free photoresponse

Graphene-based van der Waals hybrid photodetectors typically work on trap-mediated photogating mechanism, exhibiting high sensitivity, but under-perform in the fast detection of repetitive optical signals. Designing photodetectors that are simultaneously fast and highly sensitive has therefore remained difficult. In this work, we realize both attributes by integrating atomically thin sliding ferroelectrics in the design architecture, thereby uniting semiconducting properties with intrinsic polarization fields capable of efficiently governing interfacial photocarrier dynamics. We report a bilayer graphene-bilayer MoS2 (with MoS2 in a rhombohedrally stacked (3R) configuration) van der Waals photodetector with edge-contacted dual-gated field-effect transistor architecture. The photo-induced modulation in spontaneous out-of-plane polarization of 3R-MoS2 and selective confinement of charge carriers in bilayer graphene under an out-of-plane displacement field results in a tunable persistence-free photoresponse. Here, the photoinduced polarization change in 3R-MoS2 produces an optically controlled gating effect that alters the electrostatic environment of bilayer graphene, resulting in a temperature-independent photoresponse with rapid response times of the order of 10's of milliseconds (limited by the measurement instrument). We demonstrate reproducible detection of optical signals and examine the photon-counting resolution of this structure in high-sensitivity regimes, where we determine its internal quantum efficiency to be 10 percent with minimum detectable photon number of 31 in single shot measurements. This work highlights the functionality of 3R-MoS2 in manipulating the interfacial charge dynamics and establishes the hybrid of graphene and ferroelectric 3R-MoS2 as a promising platform for ultra-sensitive optoelectronic devices.

cond-mat.mes-hall↗
arXiv2026

Electron viscosity and device-dependent variability in four-probe electrical transport in ultra-clean graphene field-effect transistors

Hydrodynamic electrons in high-mobility graphene devices have demonstrated great potential in establishing an electronic analogue of relativistic quantum fluid in solid-state systems. One of the key requirements for observing viscous electron flow in an electronic channel is a large momentum-relaxation path, a process primarily limited by electron-impurity/phonon scattering in graphene. Over the past decade, multiple complex device geometries have been successfully employed to suppress momentum-relaxing scattering mechanisms; however, experimental observations have been found to be sensitive to the device fabrication process and architecture, raising questions about the signature of electron hydrodynamics itself. Here, we present a study on multiple ultra-clean graphene field-effect transistors (FETs) in a simple, rectangular four-terminal device architecture. Using electrical transport measurements, we have characterised the pristine quality of the graphene FETs and examined the variation of electrical resistance in the doped regime as a function of carrier density and temperature. Our results reveal strong device-dependent variability even in the most simple architecture that we attribute to competing momentum-conserving and momentum-relaxing scattering mechanisms, as well as coupling to contacts. Further, we have proposed a phenomenological method for analysing the results, which yields transport parameters in accordance with recent experiments. This simple experimental strategy and analysis can serve as an efficient tool for extracting the viscous electronic contribution in state-of-the-art high-mobility graphene FETs.

cond-mat.mes-hall↗
arXiv2025

Moire-Engineered Ferroelectric Transistors for Nearly Trap-free, Low-Power and Non-Volatile 2D Electronics

Long-range moire patterns in twisted WSe2 enable a built-in, moire-length-scale ferroelectric polarization that can be directly harnessed in electronic devices. Such a built-in ferroic landscape offers a compelling means to enable ultralow-voltage and non-volatile electronic functionality in two-dimensional materials; however, achieving stable polarization control without charge trapping has remained a persistent challenge. Here, we demonstrate a moire-engineered ferroelectric field-effect transistor (FeFET) utilizing twisted WSe2 bilayers that leverages atomically clean van der Waals interfaces to achieve efficient polarization-channel coupling and trap-suppressed, ultralow-voltage operation (subthreshold swing of 64 mV per decade). The device exhibits a stable non-volatile memory window of 0.10 V and high mobility, exceeding the performance of previously reported two-dimensional FeFET and matching that of advanced silicon-based devices. In addition, capacitance-voltage spectroscopy, corroborated by self-consistent Landau-Ginzburg-Devonshire modeling, indicates ultrafast ferroelectric switching (~0.5 microseconds). These results establish moire-engineered ferroelectricity as a practical and scalable route toward ultraclean, low-power, and non-volatile 2D electronics, bridging atomistic lattice engineering with functional device architectures for next-generation memory and logic technologies.

cond-mat.mtrl-sci↗
arXiv2025

Emergent Rashba spin-orbit coupling in bulk gold with buried network of nanoscale interfaces

The Rashba effect, which plays a crucial role in fundamental materials physics and potential spintronics applications, has been engineered in diverse systems, including semiconductor quantum wells, oxide heterostructures, metallic surfaces, topological insulators, ferroelectrics, etc. However, generating it in systems that preserve bulk inversion symmetry (BIS), for example, in bulk metals, has not been possible so far. We demonstrate a unique strategy to introduce and tune Rashba spin-orbit interaction (SOI) to unprecedented magnitudes in inversion-symmetric solids, by incorporating ultra-small silver nanoparticles in bulk gold. The near-identical lattice constants of Ag and Au allowed dense packing of the Ag/Au hetero-interfaces without compromising the global BIS. By varying the density of embedded nanoparticles, we generate Rashba SOI in a bulk metal with a coupling strength of ~15 meV.Angstrom, higher than any known system preserving BIS globally, and up to ~20 times increase in the spin-orbit scattering rate. We argue that the combined effect of charge-transfer at the interfaces and polaronic localization enhances the SOI.

cond-mat.mes-hall↗
arXiv2025

Dynamically tunable hydrodynamic transport in boron nitride-encapsulated graphene

Over the past decade, graphene has emerged as a promising candidate for exploring the viscous nature of electronic flow facilitated by the availability of extremely high-quality devices employing a graphene channel encapsulated within dielectric layers of hexagonal boron nitride (hBN). However, the level of disorder in such systems is mainly determined by the device fabrication protocols, making it impossible to obtain a tunability between the impurity-dominated and the viscous transport within the same device. In this work, using a combination of ultraviolet (UV) radiation and gate electric field, we have demonstrated a dynamic modulation of charge hydrodynamics, quantified in the thermal and electrical transport by the extent of departure from the Wiedemann-Franz (WF) Law in monolayer graphene devices at room temperature. We achieved this by tuning the disorder level continuously and reversibly using UV light to create transient trap states in the encapsulating hBN dielectric. With progressive UV radiation, we observed a dramatic increase in the momentum-relaxing scattering relative to that between the electrons and also the Lorentz number, by nearly a factor of ten, with increasing disorder, thereby approaching the restoration of the WF law in highly disordered graphene. Our experiments outline a potent strategy to tune the fundamental mechanism of charge flow in state-of-the-art graphene devices.

cond-mat.mes-hall↗
arXiv2025

ASR-Synchronized Speaker-Role Diarization

Speaker-role diarization (RD), such as doctor vs. patient or lawyer vs. client, is practically often more useful than conventional speaker diarization (SD), which assigns only generic labels (speaker-1, speaker-2). The state-of-the-art end-to-end ASR+RD approach uses a single transducer that serializes word and role predictions (role at the end of a speaker's turn), but at the cost of degraded ASR performance. To address this, we adapt a recent joint ASR+SD framework to ASR+RD by freezing the ASR transducer and training an auxiliary RD transducer in parallel to assign a role to each ASR-predicted word. For this, we first show that SD and RD are fundamentally different tasks, exhibiting different dependencies on acoustic and linguistic information. Motivated by this, we propose (1) task-specific predictor networks and (2) using higher-layer ASR encoder features as input to the RD encoder. Additionally, we replace the blank-shared RNNT loss by cross-entropy loss along the 1-best forced-alignment path to further improve performance while reducing computational and memory requirements during RD training. Experiments on a public and a private dataset of doctor-patient conversations demonstrate that our method outperforms the best baseline with relative reductions of 6.2% and 4.5% in role-based word diarization error rate (R-WDER), respectively

eess.AS↗
arXiv2025

Universality in quantum critical flow of charge and heat in ultra-clean graphene

Close to the Dirac point, graphene is expected to exist in quantum critical Dirac fluid state, where the flow of both charge and heat can be described with a dc electrical conductivity $\sigma_\mathrm{Q}$, and thermodynamic variables such as the entropy and enthalpy densities. Although the fluid-like viscous flow of charge is frequently reported in state-of-the-art graphene devices, the value of $\sigma_\mathrm{Q}$, predicted to be quantized and determined only by the universality class of the critical point, has not been established experimentally so far. Here we have discerned the quantum critical universality in graphene transport by combining the electrical ($\sigma$) and thermal ($\kappa_\mathrm{e}$) conductivities in very high-quality devices close to the Dirac point. We find that $\sigma$ and $\kappa_\mathrm{e}$ are inversely related, as expected from relativistic hydrodynamics, and $\sigma_\mathrm{Q}$ converges to $\approx (4\pm 1)\times e^2/h$ for multiple devices, where $e$ and $h$ are the electronic charge and the Planck's constant, respectively. We also observe, (1) a giant violation of the Wiedemann-Franz law where the effective Lorentz number exceeds the semiclassical value by more than 200 times close to the Dirac point at low temperatures, and (2) the effective dynamic viscosity ($\eta_\mathrm{th}$) in the thermal regime approaches the holographic limit $\eta_\mathrm{th}/s_\mathrm{th} \rightarrow \hbar/4\pi k_\mathrm{B}$ within a factor of four in the cleanest devices close to the room temperature, where $s_\mathrm{th}$ and $k_\mathrm{B}$ are the thermal entropy density and the Boltzmann constant, respectively. Our experiment addresses the missing piece in the potential of high-quality graphene as a testing bed for some of the unifying concepts in physics.

cond-mat.mes-hall↗
arXiv2024

Commuting Jordan derivations over a Ring with idempotents

This paper explores the behaviour of commuting Jordan derivations over prime rings with non-trivial idempotents and demonstrates that they become zero maps. Further, it establishes this result for commuting Jordan higher derivations over prime rings under specific conditions. In fact, it introduces commuting generalized Jordan derivations over rings and establishes that the zero map is the only commuting generalized Jordan derivation over prime rings under certain assumptions.

math.RA↗
arXiv2024

Increasing quantum speed limit via non-uniform magnetic field

Quantum speed limit (QSL) defines the theoretical upper bound on how fast a quantum system can evolve between states. It imposes a fundamental constraint on the rate of quantum information processing. For a relativistic spin-up electron in a uniform magnetic field, QSL increased with the magnetic field strength till around $10^{15}$ Gauss, before saturating at a saturated QSL (SQSL) of 0.2407c, where c is the speed of light. We show that by using variable magnetic fields, it is possible to surpass this limit, achieving SQSL upto 0.4-0.6c. To attain this quantum phenomenon, we solve the evolution equation of relativistic electron in spatially varying magnetic fields and find that the energies of various electron states become non-degenerate as opposed to the constant magnetic field case. This redistribution of energy is the key ingredient to accomplish higher QSL and, thus, a high information processing speed. We further explore how QSL can serve as a bridge between relativistic and non-relativistic quantum dynamics, providing insights via the Bremermann-Bekenstein bound, a quantity which constrains the maximal rate of information production. We also propose a practical experimental setup to realize these advancements. These results hold immense potential for propelling fields of quantum computation, thermodynamics and metrology.

quant-ph↗
arXiv2024

Emergent inhomogeneity and non-locality in a graphene field-effect transistor on a near-parallel moire superlattice of transition metal dichalcogenides

At near-parallel orientation, twisted bilayer of transition metal dichalcogenides exhibit inter-layer charge transfer-driven out-of-plane ferroelectricity that may lead to unique electronic device architectures. Here we report detailed electrical transport in a dual-gated graphene field-effect transistor placed on 3R stacked twisted bilayer of WSe2 at a twist angle of 2.1 degree. We observe hysteretic transfer characteristics and an emergent charge inhomogeneity with multiple local Dirac points as the electric displacement field (D) is increased. Concomitantly, we also observe a strong non-local voltage signal at D = 0 V/nm that decreases rapidly with increasing D. A linear scaling of the non-local signal with longitudinal resistance suggests edge mode transport, which we attribute to the breaking of valley symmetry of the graphene channel due to the spatially fluctuating electric field from the moire domains of the underlying twisted WSe2. A quantitative analysis connecting the non-locality and channel inhomogeneity suggests emergence of finite-size domains in the graphene channel that modulate the charge and the valley currents simultaneously. This work underlines efficient control and impact of interfacial ferroelectricity that can trigger a new genre of devices for twistronic applications.

cond-mat.mes-hall↗
arXiv2024

Engineering ultra-strong electron-phonon coupling and nonclassical electron transport in crystalline gold with nanoscale interfaces

Electrical resistivity in good metals, particularly noble metals such as gold (Au), silver (Ag), or copper, increases linearly with temperature ($T$) for $T > \Theta_{\mathrm{D}}$, where $\Theta_{\mathrm{D}}$ is the Debye temperature. This is because the coupling ($\lambda$) between the electrons and the lattice vibrations, or phonons, in these metals is rather weak with $\lambda \sim 0.1-0.2$, and a perturbative analysis suffices to explain the $T$-linear electron-phonon scattering rate. In this work, we outline a new nanostructuring strategy of crystalline Au where this foundational concept of metallic transport breaks down. We show that by embedding a distributed network of ultra-small Ag nanoparticles (AgNPs) of radius $\sim1-2$ nm inside a crystalline Au shell, an unprecedented enhancement in the electron-phonon interaction, with $\lambda$ as high as $\approx 20$, can be achieved. This is over hundred times that of bare Au or Ag, and ten times larger than any known metal. With increasing AgNP density, the electrical resistivity deviates from $T$-linearity, and approaches a saturation to the Mott-Ioffe-Regel scale $\rho_{\mathrm{MIR}}\sim h a /e^2$ for both disorder ($T\to 0$) and phonon ($T \gg \Theta_{\mathrm{D}}$)-dependent components of resistivity (here, $a=0.3$~nm, is the lattice constant of Au). This giant electron-phonon interaction, which we suggest arises from the coulomb interaction-induced coupling of conduction electrons to the localized phonon modes at the buried Au-Ag hetero-interfaces, allows experimental access to a regime of nonclassical metallic transport that has never been probed before.

cond-mat.mes-hall↗
arXiv2023

Emergent phases in graphene flat bands

Electronic correlations in two-dimensional materials play a crucial role in stabilising emergent phases of matter. The realisation of correlation-driven phenomena in graphene has remained a longstanding goal, primarily due to the absence of strong electron-electron interactions within its low-energy bands. In this context, magic-angle twisted bilayer graphene has recently emerged as a novel platform featuring correlated phases favoured by the low-energy flat bands of the underlying moiré superlattice. Notably, the observation of correlated insulators and superconductivity has garnered significant attention, leading to substantial progress in theoretical and experimental studies aiming to elucidate the origin and interplay between these two phases. A wealth of correlated phases with unprecedented tunability was discovered subsequently, including orbital ferromagnetism, Chern insulators, strange metallicity, density waves, and nematicity. However, a comprehensive understanding of these closely competing phases remains elusive. The ability to controllably twist and stack multiple graphene layers has enabled the creation of a whole new family of moiré superlattices with myriad properties being discovered at a fast pace. Here, we review the progress and development achieved so far, encompassing the rich phase diagrams offered by these graphene-based moiré systems. Additionally, we discuss multiple phases recently observed in non-moiré multilayer graphene systems. Finally, we outline future opportunities and challenges for the exploration of hidden phases in this new generation of moiré materials.

cond-mat.mes-hall↗
arXiv2023

AdaFocal: Calibration-aware Adaptive Focal Loss

Much recent work has been devoted to the problem of ensuring that a neural network's confidence scores match the true probability of being correct, i.e. the calibration problem. Of note, it was found that training with focal loss leads to better calibration than cross-entropy while achieving similar level of accuracy \cite{mukhoti2020}. This success stems from focal loss regularizing the entropy of the model's prediction (controlled by the parameter $γ$), thereby reining in the model's overconfidence. Further improvement is expected if $γ$ is selected independently for each training sample (Sample-Dependent Focal Loss (FLSD-53) \cite{mukhoti2020}). However, FLSD-53 is based on heuristics and does not generalize well. In this paper, we propose a calibration-aware adaptive focal loss called AdaFocal that utilizes the calibration properties of focal (and inverse-focal) loss and adaptively modifies $γ_t$ for different groups of samples based on $γ_{t-1}$ from the previous step and the knowledge of model's under/over-confidence on the validation set. We evaluate AdaFocal on various image recognition and one NLP task, covering a wide variety of network architectures, to confirm the improvement in calibration while achieving similar levels of accuracy. Additionally, we show that models trained with AdaFocal achieve a significant boost in out-of-distribution detection.

cs.LG↗
arXiv2023

Lie Symmetry Analysis and Some New Exact Solutions to the KP-BBM Equation

This paper is aimed to study the KP-BBM equation, which was proposed by Abdul Majid Wazwaz in 2005. To check its integrability Painleve test has been performed. Lie Symmetry analysis has been done and point symmetry generators are obtained. The invariants of the Lie algebra are found and the one-dimensional optimal system for subalgebras of the obtained Lie algebra is constructed by using the Hu-Li-Chen algorithm. Three similarity reductions and corresponding exact solutions are derived. Also, Homogeneous balance method, Tanh method are used to find exact solutions. Solitary wave like solutions are obtained and plotted for some suitable values of the parameters involved. The effects of the nonlinear coefficient and dispersion coefficient on the obtained solitary waves are discussed.

math-ph↗
arXiv2023

Additivity of multiplicative (generalized) maps over rings

In this paper, we mainly prove some results on the additivity of maps over rings under certain conditions. First, we discuss a special case of MARTINDALE III's theorem of \cite{1969M} as a bijective map $\varphi$ over a ring $R$ with a non-trivial idempotent satisfying $\varphi(ab)=\varphi(a)\varphi(b)$ for all $a, b\in R$, is additive. Then we prove that a map $D$ on $R$ satisfying $D(ab)=D(a)b+\varphi(a) D(b)$ for all $a,b\in R$, where $\varphi$ is the map mentioned above, is additive. Finally, we establish that if a map $g$ over $R$ satisfies $g(ab)=g(a)b+\varphi(a)D(b),$ for all $a,b\in R$ and the maps $\varphi$ and $D$ are mentioned above, then $g$ is additive.

math.RA↗
arXiv2023

Some generalized Jordan maps on triangular rings force additivity

In this paper, we show that a map $δ$ over a triangular ring $\mathcal{T}$ satisfying $δ(ab+ba)=δ(a)b+a τ(b)+δ(b)a+bτ(a)$, for all $a,b\in \mathcal{T}$ and for some maps $τ$ over $\mathcal{T}$ satisfying $τ(ab+ba)=τ(a)b+a τ(b)+τ(b)a+bτ(a)$, is additive. Also, it is shown that a map $T$ on $\mathcal{T}$ satisfying $T(ab)=T(a)b=aT(b)$, for all $a,b\in \mathcal{T}$, is additive. Further, we establish that if a map $D$ over $\mathcal{T}$ satisfies $(m+n)D(ab)=2mD(a)b+2naD(b)$, for all $a,b\in \mathcal{T}$ and integers $m,n\geq 1$, then $D$ is additive.

math.RA↗
arXiv2022

New Results on Generalization of Jordan centralizers over matrix rings

This paper presents a study on Jordan maps over matrix rings with some functional equations related to additive maps on these rings. We first show that every Jordan left (right) centralizer over a matrix ring is a left (right) centralizer. Moreover, every two-sided centralizer over the matrix ring is of a particular form. Further, we prove that any additive map satisfying functional equations over matrix rings becomes a two-sided centralizer. Finally, we conclude our work with some results on the Jordan left $\star$- centralizer over matrix rings and establish some results on functional equations that arise for the $\star$-centralizer.

math.RA↗