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arXiv · 0812.3905

Vertical distribution of nitrogen-vacancy centers in diamond formed by ion implantation and annealing

Charles Santori·Paul E. Barclay·Kai-Mei C. Fu·Raymond G. Beausoleil
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Abstract

Etching experiments were performed that reveal the vertical distribution of optically active nitrogen-vacancy (NV) centers in diamond created in close proximity to a surface through ion implantation and annealing. The NV distribution depends strongly on the native nitrogen concentration, and spectral measurements of the neutral and negatively-charged NV peaks give evidence for electron depletion effects in lower-nitrogen material. The results are important for potential quantum information and magnetometer devices where NV centers must be created in close proximity to a surface for coupling to optical structures.

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Charles Santori, Paul E. Barclay, Kai-Mei C. Fu, Raymond G. Beausoleil. 2009-02-08. Vertical distribution of nitrogen-vacancy centers in diamond formed by ion implantation and annealing. https://doi.org/10.1103/physrevb.79.125313

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