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arXiv · 0812.5034

Shot noise suppression in quasi one-dimensional Field Effect Transistors

Alessandro Betti·Gianluca Fiori·Giuseppe Iannaccone
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Abstract

We present a novel method for the evaluation of shot noise in quasi one-dimensional field-effect transistors, such as those based on carbon nanotubes and silicon nanowires. The method is derived by using a statistical approach within the second quantization formalism and allows to include both the effects of Pauli exclusion and Coulomb repulsion among charge carriers. In this way it extends Landauer-Buttiker approach by explicitly including the effect of Coulomb repulsion on noise. We implement the method through the self-consistent solution of the 3D Poisson and transport equations within the NEGF framework and a Monte Carlo procedure for populating injected electron states. We show that the combined effect of Pauli and Coulomb interactions reduces shot noise in strong inversion down to 23 % of the full shot noise for a gate overdrive of 0.4 V, and that neglecting the effect of Coulomb repulsion would lead to an overestimation of noise up to 180 %.

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Alessandro Betti, Gianluca Fiori, Giuseppe Iannaccone. 2008-12-30. Shot noise suppression in quasi one-dimensional Field Effect Transistors. https://doi.org/10.1109/ted.2009.2026512

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