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Giuseppe Iannaccone

Publications and source records attributed to Giuseppe Iannaccone.

At least 19 recordsLinked to original sources

Mitigating the Impact of Retention Loss on Inference Accuracy in 65 nm Single-Poly Floating-Gate Analog In-Memory Computing

We show with experiments and system-level simulations that it is possible to successfully mitigate the impact of retention loss on inference accuracy degradation by using both circuit-level compensation techniques and batch normalization recalibration at the algorithmic level. Experiments are performed on a single-poly floating-gate (FG) analog non-volatile memory array for analog in-memory computing fabricated in a standard 65 nm CMOS. We use a model of retention-loss statistics calibrated with experiments to evaluate the system-level impact on neural network models such as VGG-10/CIFAR-10 and WideResNet-28-10/CIFAR-100. We show that, after 60 days since programming, combined mitigation techniques enable to recover the baseline inference accuracy within 2-4%

cs.AR

Hardware-Aware Model Design and Training of Silicon-based Analog Neural Networks

Silicon-based analog neural networks physically embody the ideal neural network model in an approximate way. We show that by retraining the neural network using a physics-informed hardware-aware model one can fully recover the inference accuracy of the ideal network model even in the presence of significant non-idealities. This is way more promising for scalability and integration density than the default option of improving the fidelity of the analog neural network at the cost of significant energy, area, and design overhead, through extensive calibration and conservative analog design. We first present a physics-informed hardware-aware model for a time-domain vector-matrix multiplier implemented with single-transistor floating-gate memory cells that explicitly accounts for two dominant non-idealities of the physical implementation - capacitive crosstalk and bit-line voltage drop - and integrates seamlessly with modern deep-learning workflows. The model discretizes each operation into adaptive time slots, processes activation patterns in parallel, and accumulates their contributions to predict effective multiplier outputs. Using measurements from a 16x16 silicon array, we calibrate the model, show that crosstalk is layout-dependent and often dominant, and introduce an improved weight-extraction procedure that doubles signal-to-error ratio versus an ideal vector-matrix multiplier model. Finally, we show that by training silicon-based analog neural networks using an hardware-aware model in the forward pass we can recover the accuracy of the ideal software networks across three architectures -- custom MLP on low-resolution MNIST, LeNet-5 on MNIST, and a VGG-style CNN on CIFAR-10 - establishing a complete design-to-deployment workflow for time-domain analog neuromorphic chips.

cs.AR

In vivo validation of Wireless Power Transfer System for Magnetically Controlled Robotic Capsule Endoscopy

This paper presents the in vivo validation of an inductive wireless power transfer (WPT) system integrated for the first time into a magnetically controlled robotic capsule endoscopy platform. The proposed system enables continuous power delivery to the capsule without the need for onboard batteries, thus extending operational time and reducing size constraints. The WPT system operates through a resonant inductive coupling mechanism, based on a transmitting coil mounted on the end effector of a robotic arm that also houses an external permanent magnet and a localization coil for precise capsule manipulation. To ensure robust and stable power transmission in the presence of coil misalignment and rotation, a 3D receiving coil is integrated within the capsule. Additionally, a closed-loop adaptive control system, based on load-shift keying (LSK) modulation, dynamically adjusts the transmitted power to optimize efficiency while maintaining compliance with specific absorption rate (SAR) safety limits. The system has been extensively characterized in laboratory settings and validated through in vivo experiments using a porcine model, demonstrating reliable power transfer and effective robotic navigation in realistic gastrointestinal conditions: the average received power was 110 mW at a distance of 9 cm between the coils, with variable capsule rotation angles. The results confirm the feasibility of the proposed WPT approach for autonomous, battery-free robotic capsule endoscopy, paving the way for enhanced diagnostic in gastrointestinal medicine.

cs.RO

Temperature-Resilient Analog Neuromorphic Chip in Single-Polysilicon CMOS Technology

In analog neuromorphic chips, designers can embed computing primitives in the intrinsic physical properties of devices and circuits, heavily reducing device count and energy consumption, and enabling high parallelism, because all devices are computing simultaneously. Neural network parameters can be stored in local analog non-volatile memories (NVMs), saving the energy required to move data between memory and logic. However, the main drawback of analog sub-threshold electronic circuits is their dramatic temperature sensitivity. In this paper, we demonstrate that a temperature compensation mechanism can be devised to solve this problem. We have designed and fabricated a chip implementing a two-layer analog neural network trained to classify low-resolution images of handwritten digits with a low-cost single-poly complementary metal-oxide-semiconductor (CMOS) process, using unconventional analog NVMs for weight storage. We demonstrate a temperature-resilient analog neuromorphic chip for image recognition operating between 10$^{\circ}$C and 60$^{\circ}$C without loss of classification accuracy, within 2\% of the corresponding software-based neural network in the whole temperature range.

eess.IV

12-bit Delta-Sigma ADC operating at a temperature of up to 250C in Standard 0.18 $μ$m SOI CMOS

Some applications require electronic systems to operate at extremely high temperature. Extending the operating temperature range of automotive-grade CMOS processes -- through the use of dedicated design techniques -- can provide an important cost-effective advantage. We present a second-order discrete-time delta-sigma analog-to-digital converter operating at a temperature of up to 250 $^\circ$C, well beyond the 175 $^\circ$C qualification temperature of the automotive-grade CMOS process used for its fabrication (XFAB XT018). The analog-to-digital converter incorporates design techniques that are effective in mitigating the adverse effects of the high temperature, such as increased leakage currents and electromigration. We use configurations of dummy transistors for leakage compensation, clock-boosting methods to limit pass-gate cross-talk, and we optimized the circuit architecture to ensure stability and accuracy at high temperature. Comprehensive measurements demonstrate that the analog-to-digital converter achieves a signal-to-noise ratio exceeding 93 dB at 250 $^\circ$C, with an effective number of bits of 12, and a power consumption of only 44~mW. The die area of the converter is only 0.065~mm$^2$ and the area overhead of the high-temperature mitigation circuits is only 13.7%. The Schreier Figure of Merit is 140~dB at the maximum temperature of 250 $^\circ$C, proving the potential of the circuit for reliable operation in challenging applications such as gas and oil extraction and aeronautics.

eess.SP

Two-dimensional field-effect transistors based on lateral heterojunctions of transition metal dichalcogenides: dissipative quantum transport modeling

Reducing the contact resistance of field-effect transistors based on two-dimensional materials is one of the key improvements required to enable the integration of such transistors in an advanced semiconductor manufacturing process. Suitably designed lateral heterojunctions provide an opportunity to independently tailor the contact and channel properties in order to optimize contact resistance. Inspired by the recent experimental demonstration of a two-dimensional $p$-type Schottky barrier, here we use quantum transport simulations to estimate the performance of $p$-type transistors in which the channel consists of a lateral heterostructure of NbS$_2$/MoS$_2$/NbS$_2$ (semimetal-semiconductor-semimetal). We find that the gate alignment with the channel is a critical design parameter, strongly influencing the capability of the gate to modulate the Schottky barrier at the MoS$_2$/NbS$_2$ interface. This effect is also found to significantly affect the scaling behavior of the device.

cond-mat.mes-hall

CVD Graphene Contacts for Lateral Heterostructure MoS${_2}$ Field Effect Transistors

Intensive research is carried out on two-dimensional materials, in particular molybdenum disulfide, towards high-performance transistors for integrated circuits. Fabricating transistors with ohmic contacts is challenging due to the high Schottky barrier that severely limits the transistors' performance. Graphene-based heterostructures can be used in addition or as a substitute for unsuitable metals. We present lateral heterostructure transistors made of scalable chemical vapor-deposited molybdenum disulfide and chemical vapor-deposited graphene with low contact resistances of about 9 k$Ω$$μ$m and high on/off current ratios of 10${^8}$. We also present a theoretical model calibrated on our experiments showing further potential for scaling transistors and contact areas into the few nanometers range and the possibility of a strong performance enhancement by means of layer optimizations that would make transistors promising for use in future logic circuits.

cond-mat.mes-hall

Giant chirality-induced spin polarization in twisted transition metal dichalcogenides

Chirality-induced spin selectivity (CISS) is an effect that has recently attracted a great deal of attention in chiral chemistry and that remains to be understood. In the CISS effect, electrons passing through chiral molecules acquire a large degree of spin polarization. In this work we study the case of atomically-thin chiral crystals created by van der Waals assembly. We show that this effect can be spectacularly large in systems containing just two monolayers, provided they are spin-orbit coupled. Its origin stems from the combined effects of structural chirality and spin-flipping spin-orbit coupling. We present detailed calculations for twisted homobilayer transition metal dichalcogenides, showing that the chirality-induced spin polarization can be giant, e.g. easily exceeding $50\%$ for ${\rm MoTe}_2$. Our results clearly indicate that twisted quantum materials can operate as a fully tunable platform for the study and control of the CISS effect in condensed matter physics and chiral chemistry.

cond-mat.mes-hall

A 0.6V$-$1.8V Compact Temperature Sensor with 0.24°C Resolution, $\pm$1.4°C Inaccuracy and 1.06nJ per Conversion

This paper presents a fully-integrated CMOS temperature sensor for densely-distributed thermal monitoring in systems on chip supporting dynamic voltage and frequency scaling. The sensor front-end exploits a sub-threshold PMOS-based circuit to convert the local temperature into two biasing currents. These are then used to define two oscillation frequencies, whose ratio is proportional to absolute-temperature. Finally, the sensor back-end translates such frequency ratio into the digital temperature code. Thanks to its low-complexity architecture, the proposed design achieves a very compact footprint along with low-power consumption and high accuracy in a wide temperature range. Moreover, thanks to a simple embedded line regulation mechanism, our sensor supports voltage-scalability. The design was prototyped in a 180nm CMOS technology with a 0°C $-$ 100°C temperature detection range, a very wide supply voltage operating range from 0.6V up to 1.8V and very small silicon area occupation of just 0.021$mm^2$. Experimental measurements performed on 20 test chips have shown very competitive figures of merit, including a resolution of 0.24°C, an inaccuracy of $\pm$1.4°C, a sampling rate of about 1.5kHz and an energy per conversion of 1.06nJ at 30°C.

eess.SY

Vertical Heterostructures between Transition-Metal Dichalcogenides -- A Theoretical Analysis of the NbS$_2$/WSe$_2$ junction

Low-dimensional metal-semiconductor vertical heterostructures (VH) are promising candidates in the search of electronic devices at the extreme limits of miniaturization. Within this line of research, here we present a theoretical/computational study of the NbS$_2$/WSe$_2$ metal-semiconductor vertical hetero-junction using density functional theory (DFT) and conductance simulations. We first construct atomistic models of the NbS$_2$/WSe$_2$ VH considering all the five possible stacking orientations at the interface, and we conduct DFT and quantum-mechanical (QM) scattering simulations to obtain information on band structure and transmission coefficients. We then carry out an analysis of the QM results in terms of electrostatic potential, fragment decomposition, and band alignment. The behavior of transmission expected from this analysis is in excellent agreement with, and thus fully rationalizes, the DFT results, and the peculiar double-peak profile of transmission. Finally, we use maximally localized Wannier functions, projected density of states (PDOS), and a simple analytic formula to predict and explain quantitatively the differences in transport in the case of epitaxial misorientation. Within the class of Transition-Metal Dichalcogenide systems, the NbS$_2$/WSe$_2$ vertical heterostructure exhibits a wide interval of finite transmission and a double-peak profile, features that could be exploited in applications.

cond-mat.mtrl-sci

Intrinsic subthermionic capabilities and high performance of easy-to-fabricate monolayer metal dihalide MOSFETs

We investigate the design of steep-slope metal-oxide-semiconductor field-effect transistors (MOSFETs) exploiting monolayers of transition metal dihalides as channel materials. With respect to other previously proposed steep-slope transistors, these devices require simplified manufacturing processes, as no confinement of the 2D material is needed, nor any tunneling heterojunction or ferroelectric gate insulators, and only n- or p-type contacts are demanded. We demonstrate their operation by studying an implementation based on monolayer CrI$_2$ through quantum transport simulations. We show that the subthermionic capabilities of the device originate from a cold-source effect, intrinsically driven by the shape of the band structure of the 2D material and robust against the effects of thermalization induced by the electron-phonon interactions. Due to the absence of a tunneling barrier when the device is switched on, current levels can be achieved that are typically out of reach for tunnel FETs. The device also exhibits excellent scaling properties, maintaining a subthermionic subthreshold swing (SS) up to channel lengths as short as 5 nm.

cond-mat.mes-hall

A Ballistic Two-Dimensional Lateral Heterojunction Bipolar Transistor

We propose and investigate the intrinsically thinnest transistor concept: a monolayer ballistic heterojunction bipolar transistor based on a lateral heterostructure of transition metal dichalcogenides. The device is intrinsically thinner than a Field Effect Transistor because it does not need a top or bottom gate, since transport is controlled by the electrochemical potential of the base electrode. As typical of bipolar transistors, the collector current undergoes a tenfold increase for each 60 mV increase of the base voltage over several orders of magnitude at room temperature, without sophisticated optimization of the electrostatics. We present a detailed investigation based on self-consistent simulations of electrostatics and quantum transport for both electron and holes of a pnp device using MoS$_2$ for the 10-nm base and WSe$_2$ for emitter and collector. Our three-terminal device simulations confirm the working principle and a large current modulation I$_\text{ON}$/I$_\text{OFF}\sim 10^8$ for $ΔV_{\rm EB}=0.5$ V. Assuming ballistic transport, we are able to achieve a current gain $β\sim$ 10$^4$ over several orders of magnitude of collector current and a cutoff frequency up to the THz range. Exploration of the rich world of bipolar nanoscale device concepts in 2D materials is promising for their potential applications in electronics and optoelectronics.

cond-mat.mes-hall

A cold-source paradigm for steep-slope transistors based on van der Waals heterojunctions

The availability of transistors capable of operating at low supply voltage is essential to improve the key performance metric of computing circuits, i.e., the number of operations per unit energy. In this paper, we propose a new device concept for energy-efficient, steep-slope transistors based on heterojunctions of 2D materials. We show that by injecting electrons from an isolated and weakly dispersive band into a strongly dispersive one, subthermionic subthreshold swings can be obtained, as a result of a cold-source effect and of a reduced thermalization of carriers. This mechanism is implemented by integrating in a MOSFET architecture two different monolayer materials coupled through a van der Waals heterojunction, combining the subthermionic behavior of tunnel field-effect transistors (FETs) with the robustness of a MOSFET architecture against performance-degrading factors, such as traps, band tails and roughness. A further advantage with respect to tunnel FETs is that only an n-type or p-type doping is required to fabricate the device. In order to demonstrate the device concept and to discuss the underlying physics and the design options, we study through abinitio and full-quantum transport simulations a possible implementation that exploits two recently reported 2D materials.

cond-mat.mes-hall

Low-voltage 2D materials-based printed field-effect transistors for integrated digital and analog electronics on paper

Paper is the ideal substrate for the development of flexible and environmentally sustainable ubiquitous electronic systems, which, combined with two-dimensional materials, could be exploited in many Internet-of-Things applications, ranging from wearable electronics to smart packaging. Here we report high-performance MoS2 field-effect transistors on paper fabricated with a channel-array approach, combining the advantages of two large-area techniques: chemical vapor deposition and inkjet-printing.The first allows the pre-deposition of a pattern of MoS2; the second, the printing of dielectric layers, contacts, and connections to complete transistors and circuits fabrication. Average ION/IOFF of 8 x 10^3 (up to 5 x 10^4) and mobility of 5.5 cm2 V-1 s-1 (up to 26 cm2 V-1 s-1) are obtained. Fully functional integrated circuits of digital and analog building blocks, such as logic gates and current mirrors, are demonstrated, highlighting the potential of this approach for ubiquitous electronics on paper.

physics.app-ph

Theoretical Analysis of a Two-Dimensional Metallic/Semiconducting Transition-Metal Dichalcogenide NbS2//WSe2 Hybrid Interface

We report a first-principle theoretical study of a monolayer-thick lateral heterostructure (LH) joining two different transition metal dichalcogenides (TMDC): NbS2 and WSe2. The NbS2//WSe2 LH can be considered a prototypical example of a conducting(NbS2)/semiconducting(WSe2) two-dimensional (2D) hybrid heterojunction. We first generate and validate realistic atomistic models of the NbS2//WSe2 LH, derive their band structure and subject it to a fragment decomposition and electrostatic potential analysis to extract a simple but quantitative model of this interfacial system. Stoichiometric fluctuations models are also investigated and found not to alter the qualitative picture. We then conduct electron transport simulations analyze them via band alignment analysis. We conclude that the NbS2//WSe2 LH appears as a robust seamless in-plane 2D modular junction for potential use in opto-electronic devices going beyond the present miniaturization technology.

cond-mat.mtrl-sci

Flexible One-Dimensional Metal-Insulator-Graphene Diode

In this work, a novel one-dimensional geometry for metal-insulator-graphene (1D-MIG) diode with low capacitance is demonstrated. The junction of the 1D-MIG diode is formed at the 1D edge of Al2O3-encapsulated graphene with TiO2 that acts as barrier material. The diodes demonstrate ultra-high current density since the transport in the graphene and through the barrier is in plane. The geometry delivers very low capacitive coupling between the cathode and anode of the diode, which shows frequency response up to 100 GHz and ensures potential high frequency performance up to 2.4 THz. The 1D-MIG diodes are demonstrated to function uniformly and stable under bending conditions down to 6.4 mm bending radius on flexible substrate.

physics.app-ph

Lateral Heterostructure Field-Effect Transistors Based on 2D-Material Stacks With Varying Thickness and Energy Filtering Source

The bandgap dependence on the number of atomic layers of some families of 2D-materials, can be exploited to engineer and use lateral heterostructures (LHs) as high-performance Field-Effect Transistors (FET). This option can provide very good lattice matching as well as high heterointerface quality. More importantly, this bandgap modulation with layer stacking can give rise to steep transitions in the density of states (DOS) of the 2D material, that can eventually be used to achieve sub-60 mV/decade subthreshold swing in LH-FETs thanks to an energy-filtering source. We have observed this effect in the case of a PdS2 LH-FET due to the particular density of states of its bilayer configuration. Our results are based on ab initio and multiscale materials and device modeling, and incite the exploration of the 2D-material design space in order to find more abrupt DOS transitions and better suitable candidates.

cond-mat.mes-hall

Analogue two-dimensional semiconductor electronics

While digital electronics has become entirely ubiquitous in today's world and appears in the limelight, analogue electronics is still playing a crucial role in many devices and applications. Current analogue circuits are mostly manufactured using silicon as active material, but the ever present demand for improved performance, new devices and flexible integration has - similar to their digital counterparts - pushed for research into alternative materials. In recent years two-dimensional materials have received considerable research interest, fitting their promising properties for future electronics. In this work we demonstrate an operational amplifier - a basic building block of analogue electronics - using a two-dimensional semiconductor, namely molybdenum disulfide, as active material. Our device is capable of stable operation with good performance, and we demonstrate its use in feedback circuits such as inverting amplifiers, integrators, log amplifiers, and transimpedance amplifiers.

physics.app-ph