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arXiv · 0901.0899

Phase-transition driven memristive system

Tom Driscoll·Hyun-Tak Kim·Byung-Gyu Chae·Massimiliano Di Ventra·D. N. Basov
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Abstract

Memristors are passive circuit elements which behave as resistors with memory. The recent experimental realization of a memristor has triggered interest in this concept and its possible applications. Here, we demonstrate memristive response in a thin film of Vanadium Dioxide. This behavior is driven by the insulator-to-metal phase transition typical of this oxide. We discuss several potential applications of our device, including high density information storage. Most importantly, our results demonstrate the potential for a new realization of memristive systems based on phase transition phenomena.

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Tom Driscoll, Hyun-Tak Kim, Byung-Gyu Chae, Massimiliano Di Ventra, D. N. Basov. 2009-01-07. Phase-transition driven memristive system. https://doi.org/10.1063/1.3187531

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