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arXiv · 0902.0644

Current-perpendicular-to-plane magnetoresistance of a domain wall confined in a nano-oxide-layer

Jun Sato·Katsuyoshi Matsushita·Hiroshi Imamura
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Abstract

We theoretically study the current-perpendicular-to-plane magnetoresistance of a domain wall confined in a current-confined-path (CCP) structure made of a nano-oxide-layer (NOL). In order to calculate the MR ratio of the system, the continuity equations for charge and spin currents are numerically solved with the three-dimensional CCP geometry by use of finite element method. It is confirmed that the MR ratio is enhanced by the CCP structure, which is consistent with the experimental results.

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Jun Sato, Katsuyoshi Matsushita, Hiroshi Imamura. 2009-02-03. Current-perpendicular-to-plane magnetoresistance of a domain wall confined in a nano-oxide-layer. https://doi.org/10.1063/1.3055357

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