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arXiv · 0902.0887

Spin susceptibility and polarization field in a dilute two-dimensional electron system in (111) silicon

A. A. Kapustin·A. A. Shashkin·V. T. Dolgopolov·M. Goiran·H. Rakoto*·Z. D. Kvon
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Abstract

We find that the polarization field, B_chi, obtained by scaling the weak-parallel-field magnetoresistance at different electron densities in a dilute two-dimensional electron system in (111) silicon, corresponds to the spin susceptibility that grows strongly at low densities. The polarization field, B_sat, determined by resistance saturation, turns out to deviate to lower values than B_chi with increasing electron density, which can be explained by filling of the upper electron subbands in the fully spin-polarized regime.

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A. A. Kapustin, A. A. Shashkin, V. T. Dolgopolov, M. Goiran, H. Rakoto*, Z. D. Kvon. 2009-02-05. Spin susceptibility and polarization field in a dilute two-dimensional electron system in (111) silicon. https://doi.org/10.1103/physrevb.79.205314

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