arXiv subjects

Z. D. Kvon

Publications and source records attributed to Z. D. Kvon.

At least 19 recordsLinked to original sources

arXiv2026

Hydrodynamic magnetotransport in a GaAs Corbino geometry

We report the observation of positive magnetoresistance in high-mobility GaAs Corbino devices. Over a broad intermediate-temperature range, the resistance exhibits a quadratic dependence on perpendicular magnetic field. We analyze the data within hydrodynamic theories of magnetotransport in the Corbino geometry, which describe the crossover between the diffusive and viscous regimes, including finite-slip boundary conditions appropriate for current-penetrable contacts. The extracted relaxation rates are consistent with an approximately $T^2$ temperature dependence of the electron-electron scattering contribution. The extracted viscous relaxation parameters are consistent with those obtained from Hall-bar measurements. Comparison with theory indicates that the observed magnetoresistance is predominantly governed by the bulk hydrodynamic response, while finite slip modifies the Stokes--Ohm crossover quantitatively and the field-dependent boundary voltage provides a separate correction. These results show that Corbino magnetotransport can serve as a complementary bulk-sensitive probe of viscous electron flow.

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arXiv2026

Electron Hydrodynamics and Bernoulli Effect in Venturi-Shaped 2D Systems

The study of electron hydrodynamics provides a powerful framework for understanding transport in ultraclean conductors, yet experimental evidence has thus far been largely restricted to the linear-response regime. Here, we report the direct observation of a strongly nonlinear transport regime in a high-mobility two-dimensional electron system. By engineering devices with a Venturi-shaped wedge geometry specifically designed to enhance convective nonlinearities, we uncover a pronounced nonlinear voltage response and large diodicity in the current-voltage characteristics. Our experimental findings show quantitative agreement with a theoretical model that attributes the observed nonlinearity to the convective acceleration of the electron fluid, analogous to the Bernoulli effect. These results provide compelling evidence for the applicability of the hydrodynamic framework to two-dimensional electron transport and open new avenues for exploring nonlinear and preturbulent phenomena in solid-state systems.

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arXiv2026

Interaction Induced Magnetotransport in a 2D Dirac-Heavy Hole Hybrid Band System

While electron-electron (e-e) interactions are known to influence resistivity in non-Galilean invariant two-dimensional (2D) systems, their effect on magnetotransport is not fully understood. Conventional models for simple bands often predict a vanishing magnetoresistivity from e-e interactions alone. In this work, we investigate magnetotransport in a gapless 6.3 nm HgTe quantum well, a hybrid 2D band system that hosts coexisting holes with both linear (Dirac-like) and parabolic energy bands. Focusing on the high temperature regime where particle-particle collisions dominate scattering, we observe significant corrections to both the magnetoresistivity and the Hall effect. The high temperature transport coefficients are in good agreement with the theoretical model describing transport in massive-massless fermion mixtures governed by a frictional mechanism and intervalley scattering. Our findings provide strong experimental validation for this theoretical framework, demonstrating that collisions between particles with different dispersions are a key mechanism governing magnetotransport in hybrid band semimetals.

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arXiv2025

Magnetotransport in a 2D Hybrid Band System: Dirac and Heavy Hole Interplay

We investigate magnetoresistivity and the Hall effect in a 6.3 nm gapless HgTe quantum well - a two-dimensional hybrid band system featuring coexisting linear (Dirac-like) and parabolic hole energy bands at low energies. Using a classical two-subband model that incorporates intervalley scattering, we reveal a striking tenfold enhancement of the Hall resistance, primarily driven by the dominant transport contribution of Dirac holes. A comprehensive magnetotransport analysis enables us to extract key parameters, such as the mobilities of both carrier types, thereby providing insight into their complex interplay. These results establish the HgTe quantum well as a distinctive platform for exploring novel transport phenomena in hybrid band systems and deepen our understanding of mixed-carrier magnetotransport.

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arXiv2025

Resistivity of non-Galilean invariant two dimensional Dirac system

We revisited the influence of electron-electron scattering on the resistivity of a two-dimensional system with linear spectrum. In conventional systems with parabolic spectrum, where Umklapp scattering is either prohibited or ineffective due to small Fermi surface, particle-particle scattering does not contribute to conductivity because it does not change the total momentum. However, within the framework of Boltzmann kinetic model, we demonstrate that electron-electron scattering in Dirac systems can significantly contribute to conductivity, producing distinct temperature-dependent corrections: a T\textsuperscript{4} behavior at low temperatures and T\textsuperscript{2} dependence at moderate temperatures. While the predicted T\textsuperscript{4} scaling is not observed experimentally -- likely suppressed by dominant weak localization effects -- the T\textsuperscript{2} scaling is clearly confirmed in our measurements. Specifically, temperature-dependent resistivity data from gapless single-valley HgTe quantum well exhibit T\textsuperscript{2} corrections, which align well with theoretical predictions. Thus, we challenge the paradigm that T\textsuperscript{2} term in resistivity is absent in single-band 2D metals.

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arXiv2025

Universal transparency and fine band structure near the Dirac point in HgTe quantum wells

Spin-orbit coupling in thin HgTe quantum wells results in a relativistic-like electron band structure, making it a versatile solid state platform to observe and control non-trivial electrodynamic phenomena. Here we report an observation of universal terahertz (THz) transparency determined by fine-structure constant $α\approx 1/137$ in 6.5 nm-thick HgTe layer, close to the critical thickness separating phases with topologically different electronic band structure. Using THz spectroscopy in magnetic field we obtain direct evidence of asymmetric spin splitting of the Dirac cone. This particle-hole asymmetry facilitates optical control of edge spin currents in the quantum wells.

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arXiv2025

Obstacle-Induced Gurzhi Effect and Hydrodynamic Electron Flow in Two-Dimensional Systems

The viscous flow of electrons in a narrow channel requires both strong electron-electron interactions and no-slip boundary conditions. However, introducing obstacles within the liquid can significantly increase flow resistance and, as a result, amplify the effects of viscosity. Even in samples with smooth walls, the presence of an obstacle can strongly alter electron behavior, leading to pronounced hydrodynamic effects. We investigated transport in mesoscopic samples containing a disordered array of obstacles. In contrast to samples without obstacles, which do not show a decrease in resistivity with rising temperature, samples with obstacles exhibit a significant resistivity reduction as temperature increases (the Gurzhi effect). By measuring the negative magnetoresistance, we extracted shear viscosity and other parameters through comparison with theoretical predictions. Consequently, narrow-channel samples with a disordered obstacle array provide a valuable platform for studying hydrodynamic electron flow independently of boundary conditions.

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arXiv2024

Two-dimensional topological Anderson insulator in a HgTe-based semimetal

We report the experimental observation of Anderson localization in two-dimensional (2D) electrons and holes in the bulk of HgTe quantum wells with a semimetallic spectrum and under strong disorder. In contrast, the one-dimensional (1D) edge channels, arising from the spectrum's inversion, demonstrate remarkable robustness against disorder due to topological protection. Strong disorder induces a mobility gap in the bulk, enabling access to the 1D edge states and thereby realizing the two-dimensional topological Anderson insulator (TAI) state. Nonlocal transport measurements confirm the emergence of topologically protected edge channels. The TAI state appears to be very sensitive to an external magnetic field applied perpendicular to the sample. Firstly, a small magnetic field of 30mT breaks the topological protection of 1D edge channels, thus turning the system into an ordinary Anderson insulator. Secondly, the magnetic field of 0.5T delocalizes 2D bulk electrons, transforming the system into a quantum Hall liquid.

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arXiv2024

Quantum Hall effect and zero plateau in bulk HgTe

The quantum Hall effect, which exhibits a number of unusual properties, is studied in a gated 1000-nm-thick HgTe film, nominally a three-dimensional system. A weak zero plateau of Hall resistance, accompanied by a relatively small value of Rxx of the order of h/e^2, is found around the point of charge neutrality. It is shown that the zero plateau is formed by the counter-propagating chiral electron-hole edge channels, the scattering between which is suppressed. So, phenomenologically, the quantum spin Hall effect is reproduced, but with preserved ballisticity on macroscopic scales (larger than 1mm). It is shown that the formation of the QHE occurs in a two-dimensional (2D) accumulation layer near the gate, while the bulk carriers play the role of an electron reservoir. Due to the exchange of carriers between the reservoir and the 2D layer, an anomalous scaling of the QHE is observed not with respect to the CNP, but with respect to the first electron plateau.

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arXiv2024

Electron-hole scattering-induced temperature behaviour of HgTe-based semimetal quantum well

The semimetal quantum well (QW) based on HgTe structures exhibiting unusual transport properties at low temperature is examined experimentally. It demonstrates either a linear or quadratic growth of resistance with temperature at different top-gate voltages in the semimetal regime. We develop a theoretical model of HgTe-based semimetal QW resistance temperature dependence based on electron-hole scattering processes at low temperatures. We apply the Boltzmann transport equation approach to study the effect of electron-hole scattering in a semimetal QW. The calculated temperature behavior of 2D semimetal resistivity demonstrates an excellent agreement with experimental findings.

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arXiv2024

Optical Shubnikov - de Haas oscillations in 2D electron systems

We report on dynamic Shubnikov - de Haas (SdH) oscillations that are measured in the optical response, sub - terahertz transmittance of two-dimensional systems, and reveal two distinct types of oscillation nodes: "universal" nodes at integer ratios of radiation and cyclotron frequencies and "tunable" nodes at positions sensitive to all parameters of the structure. The nodes in both real and imaginary parts of the measured complex transmittance are analyzed using a dynamic version of the static Lifshitz-Kosevich formula. These results demonstrate that the node structure of the dynamic SdH oscillations provides an all-optical access to quantization- and interaction-induced renormalization effects, in addition to parameters one can obtain from the static SdH oscillations.

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arXiv2024

Interaction dominated transport in 2D conductors: from degenerate to partially-degenerate regime

In this study, we investigate the conductivity of a two-dimensional (2D) system in HgTe quantum well comprising two types of carriers with linear and quadratic spectra, respectively. The interactions between the two-dimensional Dirac holes and the heavy holes lead to the breakdown of Galilean invariance, resulting in interaction-limited resistivity. Our exploration of the transport properties spans from low temperatures, where both subsystems are fully degenerate, to higher temperatures, where the Dirac holes remain degenerate while the heavy holes follow Boltzmann statistics, creating a partially degenerate regime. Through a developed theory, we successfully predict the behavior of resistivity as $ρ\sim T^2$ and $ρ\sim T^{3}$ for the fully degenerate and partially degenerate regimes, respectively, which is in reasonable agreement with experimental observations. Notably, at elevated temperatures, the interaction-limited resistivity surpasses the resistivity caused by impurity scattering by a factor of 5-6. These findings imply that the investigated system serves as a versatile experimental platform for exploring various interaction-limited transport regimes in two component plasma.

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arXiv2023

Spin Splitting and Disorder in HgTe-Based Massless Dirac Fermion Landau Levels

An experimental study of Landau levels (LLs) in a system of two-dimensional massless Dirac fermions based on a critical thickness HgTe quantum well has been carried out. The magnetotransport and the capacitive response have been investigated simultaneously. It is shown that the formation of Shubnikov-de Haas (SdH) oscillations associated with odd v filling factors occurs in a magnetic field whose strength grows monotonically with v. This behavior is consistent with calculations of the electron spectrum, which predicts a decrease in cyclotron gaps with increasing v. Oscillations with even filling factors, corresponding to spin gaps, behave less trivially. First, the SdH oscillations with filling factors of 4 and higher are resolved in a magnetic field that is 2-2.5 times smaller than the field required to resolve neighboring SdH oscillations with odd filling factors of 3 and higher. This indicates a significant increase in the size of the spin gap caused by an interface inversion asymmetry (IIA) leading to Dirac cone splitting in a zero magnetic field. Using the spin splitting value gamma as a fitting parameter, we obtained the best agreement between experimental data and calculations at gamma=1.5 meV. Next, spin splitting for the zeroth and first LLs is observed in 2-3 times stronger magnetic fields than for the other levels, indicating an increase in disorder near the Dirac point, due to the lack of screening.

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arXiv2023

Geometric engineering of viscous magnetotransport in a two-dimensional electron system

In this study, we present our experimental investigation on the magnetotransport properties of a two-dimensional electron system in GaAs quantum wells utilizing a variety of device geometries, including obstacles with thin barriers and periodic width variations. Our primary focus is to explore the impact of these geometries on the electron viscous flow parameters, enabling precise manipulation of hydrodynamic effects under controlled conditions. Through an analysis of the large negative magnetoresistivity and zero field resistivity, we deduce the scattering times for electron-electron and electron-phonon interactions, as well as the effective channel width. Our findings confirm that the system under investigation serves as a tunable experimental platform for investigating hydrodynamic transport regimes at temperatures above 10 K.

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arXiv2023

Transport properties of a 1000-nm HgTe film: the interplay of surface and bulk carriers

We report on systematic study of transport properties of a 1000-nm HgTe film. Unlike to thinner and strained HgTe films, which are known as high-quality three-dimensional (3D) topological insulators, the film under study is much thicker than the limit of pseudomorphic growth of HgTe on a CdTe substrate. Therefore, it is expected to be fully relaxed and has the band structure of bulk HgTe, i.e., a zero gap semiconductor. Nevertheless, since the bands inversion the two-dimensional (2D) topological surface states are still expected to exist. To check this claim we studied classical and quantum transport response of the system. We demonstrate that by tuning the top-gate voltage one can change the electron-dominating transport to the hole one. The highest electron mobility is found to be more than $300 \times 10^3$ cm$^2$/Vs. The system exhibits Shubnikov-de Haas (SdH) oscillations with a complicated pattern and shows up to 5 independent frequencies in corresponding Fourier spectra. They are attributed to the topological surface states, Volkov-Pankratov states and spin-degenerate bulk states in the accumulation layer near the gate. The observed peculiarities of the quantum transport are the strong SdH oscillations of the Hall resistance, and the suppressed oscillatory response of the topological surface states.

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arXiv2022

Scattering anisotropy in HgTe (013) quantum well

We report on a detailed experimental study of the electron transport anisotropy in HgTe (013) quantum well of 22 nm width in the directions $[100]$ and $[03\bar{1}]$ as the function of the electron density $n$. The anisotropy is absent at minimal electron density near the charge neutrality point. The anisotropy increases with the increase of n and reaches about 10% when the Fermi level is within the first subband H1. There is a sharp increase of the anisotropy (up to 60%) when the Fermi level reaches the second subband E2. We conclude that the first effect is due to the small intra-subband anisotropic interface roughness scattering, and the second one is due to the strongly anisotropic inter-subband roughness scattering, but the microscopical reason of such a strong change in the anisotropy remains unknown.

cond-mat.mtrl-sci↗

arXiv2022

Spectral maximum in the terahertz photoconductance of a quantum point contact

The disappearance of the giant terahertz photoconductance of a quantum point contact under the increase in the photon energy, which was discovered experimentally (Otteneder et al., Phys. Rev. Applied 10 (2018) 014015) and studied by the numerical calculations of the photon-stimulated transport (O.A. Tkachenko et al., JETP Lett. 108 (2018) 396), is explained by the momentum conservation upon absorption of photons by tunneling electrons and on the base of perturbation theory calculations.

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arXiv2022

Demonstration of high sensitivity of microwave-induced resistance oscillations to circular polarization

We demonstrate that long-debated immunity of microwave-induced resistance oscillations (MIRO) to the sense of circular polarization is not a generic property of this phenomenon in solid-state two-dimensional electron systems. Using a large-area GaAs-based heterostructure we detect up to 30 times larger MIRO signal for the cyclotron resonance (CR) active helicity, fully consistent with the concurrently measured transmission and the deduced CR shape of the Drude absorption. We further elaborate conditions to avoid extrinsic factors capable of producing an apparent immunity of the photoresponse.

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