Excess dissipation in a single-electron box: The Sisyphus resistance

F. Persson; C. M. Wilson; M. Sandberg; G. Johansson; P. Delsing

doi:10.1021/nl903887x

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arXiv · 0902.4316

Excess dissipation in a single-electron box: The Sisyphus resistance

F. Persson·C. M. Wilson·M. Sandberg·G. Johansson·P. Delsing

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Abstract

We present measurements of the ac response of a single-electron box (SEB). We apply an rf signal with a frequency larger than the tunneling rate and drive the system out of equilibrium. We observe much more dissipation in the SEB then one would expect from a simple circuit model. We can explain this in terms of a mechanism that we call the Sisyphus resistance. The Sisyphus resistance has a strong gate dependence which can be used for electrometery applications.

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F. Persson, C. M. Wilson, M. Sandberg, G. Johansson, P. Delsing. 2010-04-19. Excess dissipation in a single-electron box: The Sisyphus resistance. https://doi.org/10.1021/nl903887x

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