Acoustoelectric luminescence from a field-effect n-i-p lateral junction

Giorgio De Simoni; Vincenzo Piazza; Lucia Sorba; Giorgio Biasiol; Fabio Beltram

doi:10.1063/1.3106108

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arXiv · 0903.1230

Acoustoelectric luminescence from a field-effect n-i-p lateral junction

Giorgio De Simoni·Vincenzo Piazza·Lucia Sorba·Giorgio Biasiol·Fabio Beltram

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Abstract

A surface-acoustic-wave (SAW) driven light-emitting-diode structure that can implement a single-photon-source for quantum-cryptography applications is demonstrated. Our lateral n-i-p junction is realized starting from an undoped GaAs/AlGaAs quantum well by gating. It incorporates interdigitated transducers for SAW generation and lateral gates for current control. We demonstrate acoustoelectric transport and SAW-driven electroluminescence. The acoustoelectric current can be controlled down to complete pinch-off by means of the lateral gates.

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Giorgio De Simoni, Vincenzo Piazza, Lucia Sorba, Giorgio Biasiol, Fabio Beltram. 2009-03-06. Acoustoelectric luminescence from a field-effect n-i-p lateral junction. https://doi.org/10.1063/1.3106108

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