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arXiv · 0903.3646

Graphite in the bi-layer regime: in-plane transport

D. B. Gutman·S. Tongay·H. K. Pal·D. L. Maslov·A. F. Hebard
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Abstract

An interplay between the increase in the number of carriers and the decrease in the scattering time is expected to result in a saturation of the in-plane resistivity, $ρ_{ab}$, in graphite above room temperature. Contrary to this expectation, we observe a pronounced increase in $ρ_{ab}$ in the interval between 300 and 900 K. We provide a theory of this effect based on intervalley scattering of charge carriers by high-frequency, graphene-like optical phonons.

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D. B. Gutman, S. Tongay, H. K. Pal, D. L. Maslov, A. F. Hebard. 2009-07-02. Graphite in the bi-layer regime: in-plane transport. https://doi.org/10.1103/physrevb.80.045418

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