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arXiv · 0904.0311

Electrostically defined few-electron double quantum dot in silicon

W. H. Lim·H. Huebl·L. H. Willems van Beveren·S. Rubanov·P. G. Spizzirri·S. J. Angus·R. G. Clark·A. S. Dzurak
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Abstract

A few-electron double quantum dot was fabricated using metal-oxide-semiconductor(MOS)-compatible technology and low-temperature transport measurements were performed to study the energy spectrum of the device. The double dot structure is electrically tunable, enabling the inter-dot coupling to be adjusted over a wide range, as observed in the charge stability diagram. Resonant single-electron tunneling through ground and excited states of the double dot was clearly observed in bias spectroscopy measurements.

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W. H. Lim, H. Huebl, L. H. Willems van Beveren, S. Rubanov, P. G. Spizzirri, S. J. Angus, R. G. Clark, A. S. Dzurak. 2009-04-02. Electrostically defined few-electron double quantum dot in silicon. https://doi.org/10.1063/1.3124242

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