arXiv subjects

L. H. Willems van Beveren

Publications and source records attributed to L. H. Willems van Beveren.

At least 19 recordsLinked to original sources

arXiv2022

Phase transformation-induced superconducting aluminium-silicon alloy rings

The development of a materials platform that exhibits both superconducting and semiconducting properties is an important endeavour for a range of emerging quantum technologies. We investigate the formation of superconductivity in nanowires fabricated with silicon-on-insulator (SOI). Aluminium from deposited contact electrodes is found to interdiffuses with the Si nanowire structures to form an Al-Si alloy along the entire length of the predefined nanowire device over micron length scales at temperatures well below that of the Al-Si eutectic. The resultant transformed nanowire structures are layered in geometry with a continuous Al-Si alloy wire sitting on the buried oxide of the SOI and a residual Si cap sitting on top of the wire. The phase transformed material is conformal with any predefined device patterns and the resultant structures are exceptionally smooth-walled compared to similar nanowire devices formed by silicidation processes. The superconducting properties of a mesoscopic AlSi ring formed on a SOI platform are investigated. Low temperature magnetoresistance oscillations, quantized in units of the fluxoid, h/2e, are observed.

cond-mat.mtrl-sci↗

arXiv2020

Anisotropic three-dimensional weak localization in ultrananocrystalline diamond films with nitrogen inclusions

We present a study of the structural and electronic properties of ultra-nanocrystalline diamond films that were modified by adding nitrogen to the gas mixture during chemical vapour deposition growth. Hall bar devices were fabricated from the resulting films to investigate their electrical conduction as a function of both temperature and magnetic field. Through low-temperature magnetoresistance measurements, we present strong evidence that the dominant conduction mechanism in these films can be explained by a combination of 3D weak localization (3DWL) and thermally activated hopping at higher temperatures. An anisotropic 3DWL model is then applied to extract the phase-coherence time as function of temperature, which shows evidence of a power law dependence in good agreement with theory.

cond-mat.mes-hall↗

arXiv2016

Optical and electronic properties of sub-surface conducting layers in diamond created by MeV B-implantation at elevated temperatures

Boron implantation with in-situ dynamic annealing is used to produce highly conductive sub-surface layers in type IIa (100) diamond plates for the search of a superconducting phase transition. Here we demonstrate that high-fluence MeV ion-implantation, at elevated temperatures avoids graphitization and can be used to achieve doping densities of 6 at.%. In order to quantify the diamond crystal damage associated with implantation Raman spectroscopy was performed, demonstrating high temperature annealing recovers the lattice. Additionally, low-temperature electronic transport measurements show evidence of charge carrier densities close to the metal-insulator-transition. After electronic characterization, secondary ion mass spectrometry was performed to map out the ion profile of the implanted plates. The analysis shows close agreement with the simulated ion-profile assuming scaling factors that take into account an average change in diamond density due to device fabrication. Finally, the data show that boron diffusion is negligible during the high temperature annealing process.

cond-mat.mtrl-sci↗

arXiv2010

Deep level transient spectroscopy study for the development of ion-implanted silicon field-effect transistors for spin-dependent transport

A deep level transient spectroscopy (DLTS) study of defects created by low-fluence, low-energy ion implantation for development of ion-implanted silicon field-effect transistors for spin-dependent transport experiments is presented. Standard annealing strategies are considered to activate the implanted dopants and repair the implantation damage in test metal-oxide-semiconductor (MOS) capacitors. Fixed oxide charge, interface trapped charge and the role of minority carriers in DLTS are investigated. A furnace anneal at 950 $\rm ^{o}$C was found to activate the dopants but did not repair the implantation damage as efficiently as a 1000 $\rm ^{o}$C rapid thermal anneal. No evidence of bulk traps was observed after either of these anneals. The ion- implanted spin-dependent transport device is shown to have expected characteristics using the processing strategy determined in this study.

cond-mat.mtrl-sci↗

arXiv2009

Architecture for high-sensitivity single-shot readout and control of the electron spin of individual donors in silicon

We describe a method to control and detect in single-shot the electron spin state of an individual donor in silicon with greatly enhanced sensitivity. A silicon-based Single-Electron Transistor (SET) allows for spin-dependent tunneling of the donor electron directly into the SET island during the read-out phase. Simulations show that the charge transfer signals are typically Δq > 0.2 e - over an order of magnitude larger than achievable with metallic SETs on the SiO2 surface. A complete spin-based qubit structure is obtained by adding a local Electron Spin Resonance line for coherent spin control. This architecture is ideally suited to demonstrate and study the coherent properties of donor electron spins, but can be expanded and integrated with classical control electronics in the context of scale-up.

cond-mat.mes-hall↗

arXiv2009

Electrically detected magnetic resonance using radio-frequency reflectometry

The authors demonstrate readout of electrically detected magnetic resonance at radio frequencies by means of an LCR tank circuit. Applied to a silicon field-effect transistor at milli-kelvin temperatures, this method shows a 25-fold increased signal-to-noise ratio of the conduction band electron spin resonance and a higher operational bandwidth of > 300 kHz compared to the kHz bandwidth of conventional readout techniques. This increase in temporal resolution provides a method for future direct observations of spin dynamics in the electrical device characteristics.

cond-mat.mtrl-sci↗

arXiv2009

Electrostically defined few-electron double quantum dot in silicon

A few-electron double quantum dot was fabricated using metal-oxide-semiconductor(MOS)-compatible technology and low-temperature transport measurements were performed to study the energy spectrum of the device. The double dot structure is electrically tunable, enabling the inter-dot coupling to be adjusted over a wide range, as observed in the charge stability diagram. Resonant single-electron tunneling through ground and excited states of the double dot was clearly observed in bias spectroscopy measurements.

cond-mat.mes-hall↗

arXiv2008

Broadband electrically detected magnetic resonance of phosphorus donors in a silicon field-effect transistor

We report electrically detected magnetic resonance of phosphorus donors in a silicon field-effect transistor. An on-chip transmission line is used to generate the oscillating magnetic field allowing broadband operation. At milli-kelvin temperatures, continuous wave spectra were obtained up to 40 GHz, using both magnetic field and microwave frequency modulation. The spectra reveal the hyperfine-split electron spin resonances characteristic for Si:P and a central feature which displays the fingerprint of spin-spin scattering in the two-dimensional electron gas.

cond-mat.mtrl-sci↗

arXiv2006

Experimental signature of phonon-mediated spin relaxation

We observe an experimental signature of the role of the phonons in spin relaxation between triplet and singlet states in a two-electron quantum dot. Using both the external magnetic field and the electrostatic confinement potential, we change the singlet-triplet energy splitting from 1.3 meV to zero and observe that the spin relaxation time depends non-monotonously on the energy splitting. A simple theoretical model is derived to capture the underlying physical mechanism. The present experiment confirms that spin-flip energy is dissipated in the phonon bath.

cond-mat.other↗

arXiv2006

Using a quantum dot as a high-frequency shot noise detector

We present the experimental realization of a Quantum Dot (QD) operating as a high-frequency noise detector. Current fluctuations produced in a nearby Quantum Point Contact (QPC) ionize the QD and induce transport through excited states. The resulting transient current through the QD represents our detector signal. We investigate its dependence on the QPC transmission and voltage bias. We observe and explain a quantum threshold feature and a saturation in the detector signal. This experimental and theoretical study is relevant in understanding the backaction of a QPC used as a charge detector.

cond-mat.mes-hall↗

arXiv2006

Non-destructive measurement of electron spins in a quantum dot

We propose and implement a non-destructive measurement that distinguishes between two-electron spin states in a quantum dot. In contrast to earlier experiments with quantum dots, the spins are left behind in the state corresponding to the measurement outcome. By measuring the spin states twice within a time shorter than the relaxation time, T1, correlations between consecutive measurements are observed. They disappear as the wait time between measurements become comparable to T1. The correlation between the post-measurement state and the measurement outcome is measured to be ~90% on average.

cond-mat.mes-hall↗

arXiv2005

Control and Detection of Singlet-Triplet Mixing in a Random Nuclear Field

We observe mixing between two-electron singlet and triplet states in a double quantum dot, caused by interactions with nuclear spins in the host semiconductor. This mixing is suppressed by applying a small magnetic field, or by increasing the interdot tunnel coupling and thereby the singlet-triplet splitting. Electron transport involving transitions between triplets and singlets in turn polarizes the nuclei, resulting in striking bistabilities. We extract from the fluctuating nuclear field a limitation on the time-averaged spin coherence time T2* of 25 ns. Control of the electron-nuclear interaction will therefore be crucial for the coherent manipulation of individual electron spins.

cond-mat.mes-hall↗

arXiv2005

Spin filling of a quantum dot derived from excited-state spectroscopy

We study the spin filling of a semiconductor quantum dot using excited-state spectroscopy in a strong magnetic field. The field is oriented in the plane of the two-dimensional electron gas in which the dot is electrostatically defined. By combining the observation of Zeeman splitting with our knowledge of the absolute number of electrons, we are able to determine the ground state spin configuration for one to five electrons occupying the dot. For four electrons, we find a ground state spin configuration with total spin S=1, in agreement with Hund's first rule. The electron g-factor is observed to be independent of magnetic field and electron number.

cond-mat.mes-hall↗

arXiv2005

Single-shot readout of electron spin states in a quantum dot using spin-dependent tunnel rates

We present a method for reading out the spin state of electrons in a quantum dot that is robust against charge noise and can be used even when the electron temperature exceeds the energy splitting between the states. The spin states are first correlated to different charge states using a spin dependence of the tunnel rates. A subsequent fast measurement of the charge on the dot then reveals the original spin state. We experimentally demonstrate the method by performing read-out of the two-electron spin states, achieving a single-shot visibility of more than 80%. We find very long triplet-to-singlet relaxation times (up to several milliseconds), with a strong dependence on in-plane magnetic field.

cond-mat.mes-hall↗

arXiv2004

Semiconductor few-electron quantum dot operated as a bipolar spin filter

We study the spin states of a few-electron quantum dot defined in a two-dimensional electron gas, by applying a large in-plane magnetic field. We observe the Zeeman splitting of the two-electron spin triplet states. Also, the one-electron Zeeman splitting is clearly resolved at both the zero-to-one and the one-to-two electron transition. Since the spin of the electrons transmitted through the dot is opposite at these two transitions, this device can be employed as an electrically tunable, bipolar spin filter. Calculations and measurements show that higher-order tunnel processes and spin-orbit interaction have a negligible effect on the polarization.

cond-mat.mes-hall↗

arXiv2004

Single-shot read-out of an individual electron spin in a quantum dot

Spin is a fundamental property of all elementary particles. Classically it can be viewed as a tiny magnetic moment, but a measurement of an electron spin along the direction of an external magnetic field can have only two outcomes: parallel or anti-parallel to the field. This discreteness reflects the quantum mechanical nature of spin. Ensembles of many spins have found diverse applications ranging from magnetic resonance imaging to magneto-electronic devices, while individual spins are considered as carriers for quantum information. Read-out of single spin states has been achieved using optical techniques, and is within reach of magnetic resonance force microscopy. However, electrical read-out of single spins has so far remained elusive. Here, we demonstrate electrical single-shot measurement of the state of an individual electron spin in a semiconductor quantum dot. We use spin-to-charge conversion of a single electron confined in the dot, and detect the single-electron charge using a quantum point contact; the spin measurement visibility is ~65%. Furthermore, we observe very long single-spin energy relaxation times (up to 0.85 ms at a magnetic field of 8 Tesla), which are encouraging for the use of electron spins as carriers of quantum information.

cond-mat.mes-hall↗

arXiv2004

Determination of the tunnel rates through a few-electron quantum dot

We demonstrate how rate equations can be employed to find analytical expressions for the sequential tunneling current through a quantum dot as a function of the tunnel rates, for an arbitrary number of states involved. We apply this method at the one-to-two electron transition where the electron states are known exactly. By comparing the obtained expressions to experimental data, the tunnel rates for six transitions are extracted. We find that these rates depend strongly on the spin and orbital states involved in the tunnel process.

cond-mat.mes-hall↗

arXiv2004

Real-time detection of single electron tunneling using a quantum point contact

We observe individual tunnel events of a single electron between a quantum dot and a reservoir, using a nearby quantum point contact (QPC) as a charge meter. The QPC is capacitively coupled to the dot, and the QPC conductance changes by about 1% if the number of electrons on the dot changes by one. The QPC is voltage biased and the current is monitored with an IV-convertor at room temperature. We can resolve tunnel events separated by only 8 $μ$s, limited by noise from the IV-convertor. Shot noise in the QPC sets a 25 ns lower bound on the accessible timescales.

cond-mat.mes-hall↗