Pumping properties of the hybrid single-electron transistor in dissipative environment

S. V. Lotkhov; A. Kemppinen; S. Kafanov; J. P. Pekola; A. B. Zorin

doi:10.1063/1.3227839

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arXiv · 0905.3402

Pumping properties of the hybrid single-electron transistor in dissipative environment

S. V. Lotkhov·A. Kemppinen·S. Kafanov·J. P. Pekola·A. B. Zorin

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Abstract

Pumping characteristics were studied of the hybrid normal-metal/superconductor single-electron transistor embedded in a high-ohmic environment. Two 3 micrometer-long microstrip resistors of CrOx with a sum resistance R=80kOhm were placed adjacent to this hybrid device. Substantial improvement of pumping and reduction of the subgap leakage were observed in the low-MHz range. At higher frequencies 0.1-1GHz, a slowdown of tunneling due to the enhanced damping and electron heating negatively affected the pumping, as compared to the reference bare devices.

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S. V. Lotkhov, A. Kemppinen, S. Kafanov, J. P. Pekola, A. B. Zorin. 2009-05-20. Pumping properties of the hybrid single-electron transistor in dissipative environment. https://doi.org/10.1063/1.3227839

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