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arXiv · 0906.0069

Specific heat of aluminium-doped superconducting silicon carbide

M. Kriener·T. Muranaka·Y. Kikuchi·J. Akimitsu·Y. Maeno
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Abstract

The discoveries of superconductivity in heavily boron-doped diamond, silicon and silicon carbide renewed the interest in the ground states of charge-carrier doped wide-gap semiconductors. Recently, aluminium doping in silicon carbide successfully yielded a metallic phase from which at high aluminium concentrations superconductivity emerges. Here, we present a specific-heat study on superconducting aluminium-doped silicon carbide. We observe a clear jump anomaly at the superconducting transition temperature 1.5 K indicating that aluminium-doped silicon carbide is a bulk superconductor. An analysis of the jump anomaly suggests BCS-like phonon-mediated superconductivity in this system.

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M. Kriener, T. Muranaka, Y. Kikuchi, J. Akimitsu, Y. Maeno. 2009-05-30. Specific heat of aluminium-doped superconducting silicon carbide. https://doi.org/10.1088/1742-6596/200/1/012096

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