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arXiv · 0906.2258

Observation of persistent photoconductivity in bulk Gallium Arsenide and Gallium Phosphide samples at cryogenic temperatures using the Whispering Gallery mode method

J. G. Hartnett·D. Mouneyrac·J. -M. Le Floch·J. Krupka·M. E. Tobar·D. Cros
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Abstract

Whispering Gallery modes in bulk cylindrical Gallium Arsenide and Gallium Phosphide samples have been examined both in darkness and under white light at cryogenics temperatures < 50 K. In both cases persistent photoconductivity was observed after initially exposing semiconductors to white light from a halogen lamp. Photoconductance decay time constants for GaP and GaAs were determined to be 0.900 +/- 0.081 ns and 1.098 +/- 0.063 ns, respectively, using this method.

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J. G. Hartnett, D. Mouneyrac, J. -M. Le Floch, J. Krupka, M. E. Tobar, D. Cros. 2009-06-12. Observation of persistent photoconductivity in bulk Gallium Arsenide and Gallium Phosphide samples at cryogenic temperatures using the Whispering Gallery mode method. https://arxiv.org/abs/0906.2258

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