arXiv · 0906.4777
Asymmetry between the electron- and hole-doped Mott transition in the periodic Anderson model
Abstract
We study the doping driven Mott metal-insulator transition (MIT) in the periodic Anderson model set in the Mott-Hubbard regime. A striking asymmetry for electron or hole driven transitions is found. The electron doped MIT at larger U is similar to the one found in the single band Hubbard model, with a first order character due to coexistence of solutions. The hole doped MIT, in contrast, is second order and can be described as the delocalization of Zhang-Rice singlets.
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G. Sordi, A. Amaricci, M. J. Rozenberg. 2009-06-25. Asymmetry between the electron- and hole-doped Mott transition in the periodic Anderson model. https://doi.org/10.1103/physrevb.80.035129
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