arXiv subjects

M. J. Rozenberg

Publications and source records attributed to M. J. Rozenberg.

At least 19 recordsLinked to original sources

arXiv2021

Doping-driven pseudogap-metal-to-metal transition in correlated electron systems

We establish that a doping-driven first-order metal-to-metal transition, from a pseudogap metal to Fermi Liquid, can occur in correlated quantum materials. Our result is based on the exact Dynamical Mean Field Theory solution of the Dimer Hubbard Model. This transition elucidates the origin of many exotic features in doped Mott materials, like the pseudogap in cuprates, incoherent bad metals, enhanced compressibility and orbital selective Mott transition. This phenomenon is suggestive to be at the roots of the many exotic phases appearing in the phase diagram of correlated materials.

cond-mat.str-el↗

arXiv2020

Quantum interference effects of out-of-plane confinement on two-dimensional electron systems in oxides

It was recently discovered that a conductive, metallic state is formed on the surface of some insulating oxides. Firstly observed on SrTiO$_3$(001), it was then found in other compounds as diverse as anatase TiO$_2$, KTaO$_3$, BaTiO$_3$, ZnO, and also on different surfaces of SrTiO$_3$ (or other oxides) with different symmetries. The spatial extension of the wave function of this electronic state is of only a few atomic layers. Experiments indicate its existence is related to the presence of oxygen vacancies induced at or near the surface of the oxide. In this article we present a simplified model aimed at describing the effect of its small spatial extension on measurements of its 3D electronic structure by angular resolved photoemission spectroscopy (ARPES). For the sake of clarity, we base our discussion on a simple tight binding scheme plus a confining potential that is assumed to be induced by the oxygen vacancies. Our model parameters are, nevertheless, obtained from density functional calculations. With this methodology we can explain from a very simple concept of selective interference the "wobbling", i.e., the photoemission intensity modulation and/or apparent dispersion of the Fermi surface and spectra along the out-of-plane ($k_z$) direction, and the "mixed 2D/3D" characteristics observed in some experiments. We conclude that the critical model parameters for such an effect are the relative strength of the electronic hopping of each band and the height/width aspect ratio of the surface confining potential. By considering recent photoemission measurements under the light of our findings, we can get relevant information on the electronic wave functions and of the nature of the confining potential.

cond-mat.str-el↗

arXiv2017

Multiple crossovers and coherent states in a Mott-Peierls insulator

We consider the dimer Hubbard model within Dynamical Mean Field Theory to study the interplay and competition between Mott and Peierls physics. We describe the various metal-insulator transition lines of the phase diagram and the break down of the different solutions that occur along them. We focus on the specific issue of the debated Mott-Peierls insulator crossover and describe the systematic evolution of the electronic structure across the phase diagram. We found that at low intra-dimer hopping the emerging local magnetic moments can unbind above a characteristic singlet temperature $T^*$. Upon increasing the inter-dimer hopping subtle changes occur in the electronic structure. Notably, we find Hubbard bands of a mix character with coherent and incoherent excitations. We argue that this state is relevant for VO$_2$ and its signatures may be observed in spectroscopic studies, and possibly through pump-probe experiments.

cond-mat.str-el↗

arXiv2016

Hubbard band or oxygen vacancy states in the correlated electron metal SrVO$_3$?

We study the effect of oxygen vacancies on the electronic structure of the model strongly correlated metal SrVO$_3$. By means of angle-resolved photoemission (ARPES) synchrotron experiments, we investigate the systematic effect of the UV dose on the measured spectra. We observe the onset of a spurious dose-dependent prominent peak at an energy range were the lower Hubbard band has been previously reported in this compound, raising questions on its previous interpretation. By a careful analysis of the dose dependent effects we succeed in disentangling the contributions coming from the oxygen vacancy states and from the lower Hubbard band. We obtain the intrinsic ARPES spectrum for the zero-vacancy limit, where a clear signal of a lower Hubbard band remains. We support our study by means of state-of-the-art ab initio calculations that include correlation effects and the presence of oxygen vacancies. Our results underscore the relevance of potential spurious states affecting ARPES experiments in correlated metals, which are associated to the ubiquitous oxygen vacancies as extensively reported in the context of a two-dimensional electron gas (2DEG) at the surface of insulating $d^0$ transition metal oxides.

cond-mat.str-el↗

arXiv2015

Engineering two-dimensional electron gases at the (001) and (101) surfaces of TiO2 anatase using light

We report the existence of metallic two-dimensional electron gases (2DEGs) at the (001) and (101) surfaces of bulk-insulating TiO2 anatase due to local chemical doping by oxygen vacancies in the near-surface region. Using angle-resolved photoemission spectroscopy, we find that the electronic structure at both surfaces is composed of two occupied subbands of d_xy orbital character. While the Fermi surface observed at the (001) termination is isotropic, the 2DEG at the (101) termination is anisotropic and shows a charge carrier density three times larger than at the (001) surface. Moreover, we demonstrate that intense UV synchrotron radiation can alter the electronic structure and stoichiometry of the surface up to the complete disappearance of the 2DEG. These results open a route for the nano-engineering of confined electronic states, the control of their metallic or insulating nature, and the tailoring of their microscopic symmetry, using UV illumination at different surfaces of anatase.

cond-mat.mtrl-sci↗

arXiv2014

First-Order Insulator-to-Metal Mott Transition in the Paramagnetic 3D System GaTa4Se8

The nature of the Mott transition in the absence of any symmetry braking remains a matter of debate. We study the correlation-driven insulator-to-metal transition in the prototypical 3D Mott system GaTa4Se8, as a function of temperature and applied pressure. We report novel experiments on single crystals, which demonstrate that the transition is of first order and follows from the coexistence of two states, one insulating and one metallic, that we toggle with a small bias current. We provide support for our findings by contrasting the experimental data with calculations that combine local density approximation with dynamical mean-field theory, which are in very good agreement.

cond-mat.str-el↗

arXiv2014

Localised Wannier orbital basis for the Mott insulators GaV4S8 and GaTa4Se8

We study the electronic properties of GaV4S8 (GVS) and GaTaSe8 (GTS), two distant members within the large family of chalcogenides AM4X8, with A={Ga, Ge}, M={V, Nb, Ta, Mo} and X={S, Se}. While all these compounds are Mott insulators, their ground state show many types of magnetic order, with GVS being ferromagnetic and GTS non-magnetic. Based on their bandstructures, calculated with Density Functional Theory methods, we compute an effective tight binding Hamiltonian in a localised Wannier basis set, for each one of the two compounds. The localised orbitals provide a very accurate representation of the bandstructure, with hopping amplitudes that rapidly decrease with distance. We estimate the super-exchange interactions and show that the Coulomb repulsion with the Hund's coupling may account the for the different ground states observed in GVS and GTS. Our localised Wannier basis provides a starting point for realistic Dynamical Mean Field Theory studies of strong correlation effects in this family compounds.

cond-mat.str-el↗

arXiv2014

Orientational tuning of the Fermi sea of confined electrons at the SrTiO3 (110) and (111) surfaces

We report the existence of confined electronic states at the (110) and (111) surfaces of SrTiO3. Using angle-resolved photoemission spectroscopy, we find that the corresponding Fermi surfaces, subband masses, and orbital ordering are different from the ones at the (001) surface of SrTiO3. This occurs because the crystallographic symmetries of the surface and sub-surface planes, and the electron effective masses along the confinement direction, influence the symmetry of the electronic structure and the orbital ordering of the t2g manifold. Remarkably, our analysis of the data also reveals that the carrier concentration and thickness are similar for all three surface orientations, despite their different polarities. The orientational tuning of the microscopic properties of two-dimensional electron states at the surface of SrTiO3 echoes the tailoring of macroscopic (e.g. transport) properties reported recently in LaAlO3/SrTiO3 (110) and (111) interfaces, and is promising for searching new types of 2D electronic states in correlated-electron oxides.

cond-mat.mtrl-sci↗

arXiv2013

Non-volatile multilevel resistive switching memory cell: A transition metal oxide-based circuit

We study the resistive switching (RS) mechanism as way to obtain multi-level memory cell (MLC) devices. In a MLC more than one bit of information can be stored in each cell. Here we identify one of the main conceptual difficulties that prevented the implementation of RS-based MLCs. We present a method to overcome these difficulties and to implement a 6-bit MLC device with a manganite-based RS device. This is done by precisely setting the remnant resistance of the RS-device to an arbitrary value. Our MLC system demonstrates that transition metal oxide non-volatile memories may compete with the currently available MLCs.

cond-mat.other↗

arXiv2012

Phase diagram of the asymmetric Hubbard model and an entropic chromatographic method for cooling cold fermions in optical lattices

We study the phase diagram of the asymmetric Hubbard model (AHM), which is characterized by different values of the hopping for the two spin projections of a fermion or equivalently, two different orbitals. This model is expected to provide a good description of a mass-imbalanced cold fermionic mixture in a 3D optical lattice. We use the dynamical mean field theory to study various physical properties of this system. In particular, we show how orbital-selective physics, observed in multi-orbital strongly correlated electron systems, can be realized in such a simple model. We find that the density distribution is a good probe of this orbital selective crossover from a Fermi liquid to a non-Fermi liquid state. Below an ordering temperature $T_o$, which is a function of both the interaction and hopping asymmetry, the system exhibits staggered long range orbital order. Apart from the special case of the symmetric limit, i.e., Hubbard model, where there is no hopping asymmetry, this orbital order is accompanied by a true charge density wave order for all values of the hopping asymmetry. We calculate the order parameters and various physical quantities including the thermodynamics in both the ordered and disordered phases. We find that the formation of the charge density wave is signaled by an abrupt increase in the sublattice double occupancies. Finally, we propose a new method, entropic chromatography, for cooling fermionic atoms in optical lattices, by exploiting the properties of the AHM. To establish this cooling strategy on a firmer basis, we also discuss the variations in temperature induced by the adiabatic tuning of interactions and hopping parameters.

cond-mat.quant-gas↗

arXiv2012

A path to poor coherence in heavy fermions from Mott physics and hybridization

We investigate the anomalous metal arising by hole doping the Mott insulating state of the periodic Anderson model. Using Dynamical Mean-Field Theory we show that, as opposed to the electron-doped case, in the hole-doped regime the hybridization between localized and delocalized orbitals leads to the formation of composite quasi-particles reminiscent of the Zhang-Rice singlets. We compute the coherence temperature of this state, showing its exponentially small value at low dopings. As a consequence the weakly-doped Mott state deviates from the predictions of Fermi-liquid theory already at small temperatures. The onset of the Zhang-Rice state and of the consequent poor coherence is due to the electronic structure in which both localized and itinerant carriers have to be involved in the formation of the conduction states and to the proximity to the Mott state. By investigating the magnetic properties of this state, we discuss the relation between the anomalous metallic properties and the behavior of the magnetic degrees of freedom.

cond-mat.str-el↗

arXiv2012

Orbital selective crossover and Mott transitions in an asymmetric Hubbard model of cold atoms in optical lattices

We study the asymmetric Hubbard model at half-filling as a generic model to describe the physics of two species of repulsively interacting fermionic cold atoms in optical lattices. We use Dynamical Mean Field Theory to obtain the paramagnetic phase diagram of the model as function of temperature, interaction strength and hopping asymmetry. A Mott transition with a region of two coexistent solutions is found for all nonzero values of the hopping asymmetry. At low temperatures the metallic phase is a heavy Fermi-liquid, qualitatively analogous to the Fermi liquid state of the symmetric Hubbard model. Above a coherence temperature, an orbital-selective crossover takes place, wherein one fermionic species effectively localizes, and the resulting bad metallic state resembles the non-Fermi liquid state of the Falicov-Kimball model. We compute observables relevant to cold atom systems such as the double occupation, the specific heat and entropy and characterize their behavior in the different phases.

cond-mat.str-el↗

arXiv2011

Asymmetric pulsing for reliable operation of titanium/manganite memristors

We present a pulsing protocol that significantly increases the endurance of a titanium-manganite interface used as a binary memory cell. The core of this protocol is an algorithm that searches for the proper values for the set and reset pulses, canceling the drift in the resistance values. A set of experiments show the drift-free operation for more than $10^{5}$ switching cycles, as well as the detrimental effect by changing the amplitude of pulses indicated by the protocol. We reproduced the results with a numerical model, which provides information on the dynamics of the oxygen vacancies during the switching cycles.

cond-mat.mtrl-sci↗

arXiv2010

Non-equilibrium electronic transport in a one-dimensional Mott insulator

We calculate the non-equilibrium electronic transport properties of a one-dimensional interacting chain at half filling, coupled to non-interacting leads. The interacting chain is initially in a Mott insulator state that is driven out of equilibrium by applying a strong bias voltage between the leads. For bias voltages above a certain threshold we observe the breakdown of the Mott insulator state and the establishment of a steady-state electronic current through the system. Based on extensive time-dependent density matrix renormalization group simulations, we show that this steady-state current always has the same functional dependence on voltage, independent of the microscopic details of the model and relate the value of the threshold to the Lieb-Wu gap. We frame our results in terms of the Landau-Zener dielectric breakdown picture. Finally, we also discuss the real-time evolution of the current, and characterize the current-carrying state resulting from the breakdown of the Mott insulator by computing the double occupancy, the spin structure factor, and the entanglement entropy.

cond-mat.str-el↗

arXiv2010

Unveiling a two-dimensional electron gas with universal subbands at the surface of SrTiO3

Similar to silicon that is the basis of conventional electronics, strontium titanate (SrTiO3) is the bedrock of the emerging field of oxide electronics. SrTiO3 is the preferred template to create exotic two-dimensional (2D) phases of electron matter at oxide interfaces, exhibiting metal-insulator transitions, superconductivity, or large negative magnetoresistance. However, the physical nature of the electronic structure underlying these 2D electron gases (2DEGs) remains elusive, although its determination is crucial to understand their remarkable properties. Here we show, using angle-resolved photoemission spectroscopy (ARPES), that there is a highly metallic universal 2DEG at the vacuum-cleaved surface of SrTiO3, independent of bulk carrier densities over more than seven decades, including the undoped insulating material. This 2DEG is confined within a region of ~5 unit cells with a sheet carrier density of ~0.35 electrons per a^2 (a is the cubic lattice parameter). We unveil a remarkable electronic structure consisting on multiple subbands of heavy and light electrons. The similarity of this 2DEG with those reported in SrTiO3-based heterostructures and field-effect transistors suggests that different forms of electron confinement at the surface of SrTiO3 lead to essentially the same 2DEG. Our discovery provides a model system for the study of the electronic structure of 2DEGs in SrTiO3-based devices, and a novel route to generate 2DEGs at surfaces of transition-metal oxides.

cond-mat.mtrl-sci↗

arXiv2010

Weak coupling study of decoherence of a qubit in disordered magnetic environments

We study the decoherence of a qubit weakly coupled to frustrated spin baths. We focus on spin-baths described by the classical Ising spin glass and the quantum random transverse Ising model which are known to have complex thermodynamic phase diagrams as a function of an external magnetic field and temperature. Using a combination of numerical and analytical methods, we show that for baths initally in thermal equilibrium, the resulting decoherence is highly sensitive to the nature of the coupling to the environment and is qualitatively different in different parts of the phase diagram. We find an unexpected strong non-Markovian decay of the coherence when the random transverse Ising model bath is prepared in an initial state characterized by a finite temperature paramagnet. This is contrary to the usual case of exponential decay (Markovian) expected for spin baths in finite temperature paramagnetic phases, thereby illustrating the importance of the underlying non-trivial dynamics of interacting quantum spinbaths.

cond-mat.mes-hall↗

arXiv2010

Hysteresis Switching Loops in Ag-manganite memristive interfaces

Multilevel resistance states in silver-manganite interfaces are studied both experimentally and through a realistic model that includes as a main ingredient the oxygen vacancies diffusion under applied electric fields. The switching threshold and amplitude studied through Hysteresis Switching Loops are found to depend critically on the initial state. The associated vacancy profiles further unveil the prominent role of the effective electric field acting at the interfaces. While experimental results validate main assumptions of the model, the simulations allow to disentangle the microscopic mechanisms behind the resistive switching in metal-transition metal oxide interfaces.

cond-mat.other↗

arXiv2010

Mechanism for bipolar resistive switching in transition metal oxides

We introduce a model that accounts for the bipolar resistive switching phenomenom observed in transition metal oxides. It qualitatively describes the electric field-enhanced migration of oxygen vacancies at the nano-scale. The numerical study of the model predicts that strong electric fields develop in the highly resistive dielectric-electrode interfaces, leading to a spatially inhomogeneous oxygen vacancies distribution and a concomitant resistive switching effect. The theoretical results qualitatively reproduce non-trivial resistance hysteresis experiments that we also report, providing key validation to our model.

cond-mat.mtrl-sci↗