Radiation Tolerance of CMOS Monolithic Active Pixel Sensors with Self-Biased Pixels

M. Deveaux; S. Amar-Youcef; A. Besson; G. Claus; C. Colledani; M. Dorokhov; C. Dritsa; W. Dulinski; I. Froehlich; M. Goffe; D. Grandjean; S. Heini; A. Himmi; C. Hu; K. Jaaskelainen; C. Muentz; A. Shabetai; J. Stroth; M. Szelezniak; I. Valin; M. Winter

doi:10.1016/j.nima.2010.04.045

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arXiv · 0908.4202

Radiation Tolerance of CMOS Monolithic Active Pixel Sensors with Self-Biased Pixels

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Abstract

CMOS Monolithic Active Pixel Sensors (MAPS) are proposed as a technology for various vertex detectors in nuclear and particle physics. We discuss the mechanisms of ionizing radiation damage on MAPS hosting the the dead time free, so-called self bias pixel. Moreover, we discuss radiation hardened sensor designs which allow operating detectors after exposing them to irradiation doses above 1 Mrad

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M. Deveaux, S. Amar-Youcef, A. Besson, G. Claus, C. Colledani, M. Dorokhov, C. Dritsa, W. Dulinski, I. Froehlich, M. Goffe, D. Grandjean, S. Heini, A. Himmi, C. Hu, K. Jaaskelainen, C. Muentz, A. Shabetai, J. Stroth, M. Szelezniak, I. Valin, M. Winter. 2009-08-28. Radiation Tolerance of CMOS Monolithic Active Pixel Sensors with Self-Biased Pixels. https://doi.org/10.1016/j.nima.2010.04.045

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