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arXiv · 0910.4329

Electronic Transport in Chemical Vapor Deposited Graphene Synthesized on Cu: Quantum Hall Effect and Weak Localization

Helin Cao·Qingkai Yu·Luis A. Jauregui·Jifa Tian·Wei Wu·Zhihong Liu·Romaneh Jalilian·Daniel K. Benjamin·Zhigang Jiang·Jiming Bao·Steven S. S. Pei·Yong P. Chen
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Abstract

We report on electronic properties of graphene synthesized by chemical vapor deposition (CVD) on copper then transferred to SiO2/Si. Wafer-scale (up to 4 inches) graphene films have been synthesized, consisting dominantly of monolayer graphene as indicated by spectroscopic Raman mapping. Low temperature transport measurements are performed on micro devices fabricated from such CVD graphene, displaying ambipolar field effect (with on/off ratio ~5 and carrier mobilities up to ~3000 cm^2/Vs) and "half-integer" quantum Hall effect, a hall-mark of intrinsic electronic properties of monolayer graphene. We also observe weak localization and extract information about phase coherence and scattering of carriers.

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Helin Cao, Qingkai Yu, Luis A. Jauregui, Jifa Tian, Wei Wu, Zhihong Liu, Romaneh Jalilian, Daniel K. Benjamin, Zhigang Jiang, Jiming Bao, Steven S. S. Pei, Yong P. Chen. 2010-03-25. Electronic Transport in Chemical Vapor Deposited Graphene Synthesized on Cu: Quantum Hall Effect and Weak Localization. https://doi.org/10.1063/1.3371684

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