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arXiv · 0910.5510

Test of scaling theory in two dimensions in the presence of valley splitting and intervalley scattering in Si-MOSFETs

A. Punnoose·A. M. Finkel'stein·A. Mokashi·S. V. Kravchenko
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Abstract

We show that once the effects of valley splitting and intervalley scattering are incorporated, renormalization group theory consistently describes the metallic phase in silicon metal-oxide-semiconductor field-effect transistors down to the lowest accessible temperatures.

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A. Punnoose, A. M. Finkel'stein, A. Mokashi, S. V. Kravchenko. 2009-10-28. Test of scaling theory in two dimensions in the presence of valley splitting and intervalley scattering in Si-MOSFETs. https://doi.org/10.1103/physrevb.82.201308

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