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arXiv · 0912.0755

Influence of encapsulation temperature on Ge:P delta-doped layers

G. Scappucci·G. Capellini·M. Y. Simmons
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Abstract

We present a systematic study of the influence of the encapsulation temperature on dopant confinement and electrical properties of Ge:P delta-doped layers. For increasing growth temperature we observe an enhancement of the electrical properties accompanied by an increased segregation of the phosphorous donors, resulting in a slight broadening of the delta-layer. We demonstrate that a step-flow growth achieved at 530 C provides the best compromise between high crystal quality and minimal dopant redistribution, with an electron mobility ~ 128 cm^2/Vs at a carrier density 1.3x10^14 cm-2, and a 4.2 K phase coherence length of ~ 180 nm.

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G. Scappucci, G. Capellini, M. Y. Simmons. 2009-12-03. Influence of encapsulation temperature on Ge:P delta-doped layers. https://doi.org/10.1103/physrevb.80.233202

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