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arXiv · 0912.2140

Projected Performance Advantage of Multilayer Graphene Nanoribbon as Transistor Channel Material

Yijian Ouyang·Hongjie Dai·Jing Guo
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Abstract

The performance limits of the multilayer graphene nanoribbon (GNR) field-effect transistor (FET) are assessed and compared to those of monolayer GNR FET and carbon nanotube (CNT) FET. The results show that with a thin high-k gate insulator and reduced interlayer coupling, multilayer GNR FET can significantly outperform its CNT counterpart with a similar gate and bandgap in terms of the ballistic on-current. In the presence of optical phonon scattering, which has a short mean free path in the graphene-derived nanostructures, the advantage of the multilayer GNRFET is even more significant. The simulation results indicate multilayer GNRs with incommensurate non-AB stacking and weak interlayer coupling are the best candidate for high performance GNR FETs.

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Yijian Ouyang, Hongjie Dai, Jing Guo. 2009-12-11. Projected Performance Advantage of Multilayer Graphene Nanoribbon as Transistor Channel Material. https://arxiv.org/abs/0912.2140

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