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arXiv · 1001.0703

Mechanism for bipolar resistive switching in transition metal oxides

M. J. Rozenberg·M. J. Sanchez·R. Weht·C. Acha·F. Gomez-Marlasca·P. Levy
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Abstract

We introduce a model that accounts for the bipolar resistive switching phenomenom observed in transition metal oxides. It qualitatively describes the electric field-enhanced migration of oxygen vacancies at the nano-scale. The numerical study of the model predicts that strong electric fields develop in the highly resistive dielectric-electrode interfaces, leading to a spatially inhomogeneous oxygen vacancies distribution and a concomitant resistive switching effect. The theoretical results qualitatively reproduce non-trivial resistance hysteresis experiments that we also report, providing key validation to our model.

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M. J. Rozenberg, M. J. Sanchez, R. Weht, C. Acha, F. Gomez-Marlasca, P. Levy. 2010-01-05. Mechanism for bipolar resistive switching in transition metal oxides. https://doi.org/10.1103/physrevb.81.115101

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