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arXiv · 1001.3050

Microchannel avalanche photodiode with wide linearity range

Z. Sadygov·A. Olshevski·N. Anphimov·T. Bokova·V. Chalyshev·I. Chirikov-Zorin·A. Dovlatov·Z. Krumshtein·R. Mekhtieva·R. Mukhtarov·V. Shukurova·M. Troitskaya·V. Zhezher
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Abstract

Design and physical operation principles of new microchannel avalanche photodiode (MC APD) with gain up to 10^5 and linearity range improved an order of magnitude compared to known similar devices. A distinctive feature of the new device is a directly biased p-n junction under each pixel which plays role of an individual quenching resistor. This allows increasing pixel density up to 40000 per mm^2 and making entire device area sensitive.

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Z. Sadygov, A. Olshevski, N. Anphimov, T. Bokova, V. Chalyshev, I. Chirikov-Zorin, A. Dovlatov, Z. Krumshtein, R. Mekhtieva, R. Mukhtarov, V. Shukurova, M. Troitskaya, V. Zhezher. 2010-01-18. Microchannel avalanche photodiode with wide linearity range. https://doi.org/10.1134/s106378501006012x

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