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arXiv · 1001.5247

p-i-n Tunnel FETs vs. n-i-n MOSFETs: Performance Comparison from Devices to Circuits

Yunfei Gao·Siyuranga O. Koswatta·Dmitri E. Nikonov·Mark S. Lundstrom
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Abstract

The band-to-band tunneling transistors have some performance advantages over the conventional MOSFETs due to the <60mV/dec sub-threshold slope. In this paper, carbon nanotubes are used as a model channel material to address issues that we believe will apply to BTBT FETs vs. MOSFETs more generally. We use pz-orbital tight-binding Hamiltonian and the non-equilibrium Green function (NEGF) formalism for rigorous treatment of dissipative quantum transport. A device level comparison of p-i-n TFETs and n-i-n MOSFETs in both ballistic and dissipative cases has been performed previously. In this paper, the possibility of using p-i-n TFETs in ultra-low power sub-threshold logic circuits is investigated using a rigorous numerical simulator. The results show that, in sub-threshold circuit operation, the p-i-n TFETs have better DC characteristics, and can deliver ~15x higher performance at the iso-P_LEAKAGE, iso-VDD conditions. Because p-i-n TFETs can operate at lower VDD than n-i-n MOSFETs, they can deliver ~3x higher performance at the same power (P_OPERATION). This results in ~3x energy reduction under iso-delay conditions. Therefore the p-i-n TFETs are more suitable for sub-threshold logic operation.

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Yunfei Gao, Siyuranga O. Koswatta, Dmitri E. Nikonov, Mark S. Lundstrom. 2010-01-28. p-i-n Tunnel FETs vs. n-i-n MOSFETs: Performance Comparison from Devices to Circuits. https://arxiv.org/abs/1001.5247

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