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arXiv · 1002.3450

Gating of high-mobility two-dimensional electron gases in GaAs/AlGaAs heterostructures

C. Rossler·T. Feil·P. Mensch·T. Ihn·K. Ensslin·D. Schuh·W. Wegscheider
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Abstract

We investigate high-mobility two-dimensional electron gases in AlGaAs heterostructures by employing Schottky-gate-dependent measurements of the samples' electron density and mobility. Surprisingly, we find that two different sample configurations can be set in situ with mobilities diering by a factor of more than two in a wide range of densities. This observation is discussed in view of charge redistributions between the doping layers and is relevant for the design of future gateable high-mobility electron gases.

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C. Rossler, T. Feil, P. Mensch, T. Ihn, K. Ensslin, D. Schuh, W. Wegscheider. 2010-02-18. Gating of high-mobility two-dimensional electron gases in GaAs/AlGaAs heterostructures. https://doi.org/10.1088/1367-2630%2F12%2F4%2F043007

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